Magnetic random access memory and method of manufacturing the same

1. A magnetic random access memory comprising:

a substrate;

a magnetoresistive effect element formed above the substrate and having a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, a hollow portion being formed in a center of the recording layer, and the magnetization directions in the fixed layer and the recording layer taking one of a parallel state and an antiparallel state, which are perpendicular to an upper surface of the substrate, in accordance with a direction of an electric current supplied between the fixed layer and the recording layer;

an insulating layer formed in the hollow portion;

a wiring connected to one terminal of the magnetoresistive effect element; and

a transistor formed in the substrate and connected to the other terminal of the magnetoresistive effect element.

2. The memory according to claim 1 , wherein

a planar shape of the recording layer is a ring shape, and

a planar shape of the fixed layer and the nonmagnetic layer is a disk shape.

3. The memory according to claim 1 , wherein when the magnetoresistive effect element is viewed from above, the magnetization direction in the recording layer is one discontinuous direction regardless of a shape of the recording layer.

4. The memory according to claim 1 , wherein an outside surface of the recording layer is positioned inside side surfaces of the fixed layer and the nonmagnetic layer.

5. The memory according to claim 1 , wherein in a direction in which the fixed layer, the nonmagnetic layer, and the recording layer are stacked, a film thickness of the recording layer is larger than a film thickness of the fixed layer.

6. The memory according to claim 1 , wherein in a direction in which the fixed layer, the nonmagnetic layer, and the recording layer are stacked, a film thickness of the recording layer is smaller than a film thickness of the fixed layer.

7. The memory according to claim 1 , wherein

the hollow portion continuously exists in centers of the fixed layer and the nonmagnetic layer, and

the fixed layer, the nonmagnetic layer, and the recording layer are formed on a side surface of the insulating layer.

8. The memory according to claim 7 , wherein a planar shape of the fixed layer, the nonmagnetic layer, and the recording layer is a ring shape.

9. The memory according to claim 7 , further comprising an interlayer insulating film formed around the magnetoresistive effect element by the same layer as the insulating layer.