IP Library Granted Patent US 9,679,851
Granted Patent B2
US 9,679,851 · App. 15/055,894 · Granted Jun 13, 2017

Graphene wiring structure and manufacturing method thereof

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Quick Facts
Patent No.
US 9,679,851
App. No.
15/055,894
Granted
Jun 13, 2017
Kind
B2
Abstract

A graphene wring structure of an embodiment includes multilayer graphene, a first interlayer compound existing in an interlayer space of the multilayer graphene, and a second interlayer compound existing in the interlayer space of the multilayer graphene. The second interlayer compound containing at least one of an oxide, a nitride and a carbide.

Claims (82)

1. A graphene wiring structure comprising:

multilayer graphene;

a first interlayer compound existing in an interlayer space of the multilayer graphene; and

a second interlayer compound existing in the interlayer space of the multilayer graphene,

wherein the second interlayer compound comprises at least one of an oxide, a nitride and a carbide, and,

the second interlayer compound exists on a side surface of the multilayer graphene.

2. The structure according to claim 1 ,

wherein the multilayer graphene is a lamination of flat graphene sheets, and

the second interlayer compound exists in the interlayer space of the multilayer graphene such that the second interlayer compound blocks at least a part of a grain boundary and a flaw of the flat graphene sheet.

3. The structure according to claim 1 ,

wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, alkali metal, alkaline-earth metal, halogen, and interhalogen compound,

the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide,

the metal chloride is a chloride of one or more types of metals selected from among Fe, Cu, Al and Mo,

the metal fluoride is a fluoride of one or more types of metals selected from among B and As,

the alkali metal is one or more types selected from among Li, Na and K,

the alkaline-earth metal is one or more types selected from among Mg and Ca,

the halogen is one or more types selected from among F 2 , Cl 2 , Br 2 and I 2 ,

the interhalogen compound is a compound of I and one or more types selected from among F, Cl and Br,

the metal oxide is an oxide of one or more types of metals selected from among Fe, Cu, Al and Mo,

the metal nitride is a nitride of one or more types of metals selected from among Fe, Cu, Al and Mo, and

the metal carbide is a carbide of one or more types of metals selected from among Fe, Cu, Al and Mo.

4. The structure according to claim 1 ,

wherein the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, and interhalogen compound,

the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide,

the metal chloride is a chloride of one or more types of metals selected from among FeCl 3 , CuCl 2 , AlCl 3 and MoCl 5 ,

the metal fluoride is a fluoride of one or more types of metals selected from among BF 3 and AsF 5 ,

the interhalogen compound is a compound of one or more types selected from among IBr and ICl,

the metal oxide is an oxide of one or more types of metals selected from among Fe 2 O 3 , CuO, Al 2 O 3 and MoO 2 ,

the metal nitride is a nitride of one or more types of metals selected from among Fe 3 N, Cu 3 N 2 , AlN and MoN x , and

the metal carbide is a carbide of one or more types of metals selected from among Fe 3 C, Cu 2 C, Al 4 C 3 and Mo 2 C.

5. The structure according to claim 1 ,

wherein the multilayer graphene is polycrystalline graphene.

6. The structure according to claim 1 ,

wherein a wiring width of the multilayer graphene is 20 nm or less.

7. The structure according to claim 1 ,

wherein the first interlayer compound and the second interlayer compound contain a common metal.

8. The structure according to claim 1 ,

wherein the second interlayer compound exists on entirety of the side surface of the multilayer graphene.

9. The structure according to claim 1 ,

wherein the second interlayer compound exists on entirety of side surfaces of the multilayer graphene.

10. The structure according to claim 1 ,

wherein the second interlayer compound is in physical contact with an edge of the multilayer graphene.

11. A graphene wiring structure comprising:

multilayer graphene;

a first interlayer compound existing in an interlayer space of the multilayer graphene; and

a second interlayer compound existing in the interlayer space of the multilayer graphene,

wherein the second interlayer compound containing at least one of an oxide, a nitride and a carbide,

the first interlayer compound is one or more types selected from among metal chloride, metal fluoride, alkali metal, alkaline-earth metal, halogen, and interhalogen compound, and

the second interlayer compound is one or more types selected from among metal oxide, metal nitride, and metal carbide.

12. The structure according to claim 11 ,

wherein the multilayer graphene is a lamination of flat graphene sheets, and

the second interlayer compound exists in the interlayer space of the multilayer graphene such that the second interlayer compound blocks at least a part of a grain boundary and a flaw of the flat graphene sheet.

13. The structure according to claim 11 ,

wherein the second interlayer compound exists on a side surface of the multilayer graphene.

14. The structure according to claim 11 ,

wherein the metal chloride is a chloride of one or more types of metals selected from among Fe, Cu, Al and Mo,

the metal fluoride is a fluoride of one or more types of metals selected from among B and As,

the alkali metal is one or more types selected from among Li, Na and K,

the alkaline-earth metal is one or more types selected from among Mg and Ca,

the halogen is one or more types selected from among F 2 , Cl 2 , Br 2 and I 2 ,

the interhalogen compound is a compound of I and one or more types selected from among F, Cl and Br,

the metal oxide is an oxide of one or more types of metals selected from among Fe, Cu, Al and Mo,

the metal nitride is a nitride of one or more types of metals selected from among Fe, Cu, Al and Mo, and

the metal carbide is a carbide of one or more types of metals selected from among Fe, Cu, Al and Mo.

15. The structure according to claim 11 ,

wherein the metal chloride is a chloride of one or more types of metals selected from among FeCl 3 , CuCl 2 , AlCl 3 and MoCl 5 ,

the metal fluoride is a fluoride of one or more types of metals selected from among BF 3 and AsF 5 ,

the interhalogen compound is a compound of one or more types selected from among IBr and ICl,

the metal oxide is an oxide of one or more types of metals selected from among Fe 2 O 3 , CuO, Al 2 O 3 and MoO 2 ,

the metal nitride is a nitride of one or more types of metals selected from among Fe 3 N, Cu 3 N 2 , AlN and MoN x , and

the metal carbide is a carbide of one or more types of metals selected from among Fe 3 C, Cu 2 C, Al 4 C 3 and Mo 2 C.

16. The structure according to claim 11 ,

wherein the multilayer graphene is polycrystalline graphene.

17. The structure according to claim 11 ,

wherein a wiring width of the multilayer graphene is 20 nm or less.

18. The structure according to claim 11 ,

wherein the first interlayer compound and the second interlayer compound contain a common metal.

19. The structure according to claim 13 ,

wherein the second interlayer compound exists on entirety of the side surface of the multilayer graphene, or

the second interlayer compound exists on entirety of side surfaces of the multilayer graphene.

20. The structure according to claim 13 ,

wherein the second interlayer compound is in physical contact with an edge of the multilayer graphene.

Assignments (4)
DE-MERGER Recorded Dec 12, 2019
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051260/0291 →
MERGER Recorded Dec 12, 2019
From: TOSHIBA MEMORY CORPORATION; K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051262/0776 →
CHANGE OF NAME AND ADDRESS Recorded Dec 12, 2019
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 051262/0881 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 29, 2016
From: SAKAI, TADASHI; MIYAZAKI, HISAO; KATAGIRI, MASAYUKI; YAMAZAKI, YUICHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 037850/0097 →