Magnetic random access memory and method of manufacturing the same
View Patent ↗A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
1. A magnetic random access memory comprising:
a first wiring;
a second wiring formed above and spaced apart from the first wiring;
a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer;
a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers;
a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring;
a first contact formed in contact with a side surface of the first side insulating film; and
a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
2. The memory according to claim 1 , wherein a portion of the first contact covers an upper portion of the first side insulating film.
3. The memory according to claim 1 , further comprising:
an interlayer insulating film formed around the first side insulating film and the first contact by using a material different from the first side insulating film.
4. The memory according to claim 1 , wherein the first wiring runs in a magnetic hard axis direction of the magnetoresistive effect element.
5. The memory according to claim 1 , further comprising:
a semiconductor substrate;
a gate electrode formed on the semiconductor substrate;
a first diffusion layer and a second diffusion layer formed in the semiconductor substrate on two sides of the gate electrode;
a second side insulating film formed on a side surface of the gate electrode; and
a second contact having a side surface in contact with a side surface of the second side insulating film, and connected to the first contact and the first diffusion layer.
6. The memory according to claim 5 , further comprising:
an interlayer insulating film formed around the second side insulating film and the second contact by using a material different from the second side insulating film.
7. The memory according to claim 1 , further comprising:
a first top insulating film formed on an upper surface of the metal layer; and
a second contact connected to the metal layer and the third wiring through the first top insulating film.
8. The memory according to claim 7 , wherein a material of the first top insulating film is the same as the material of the first side insulating film.
9. The memory according to claim 7 , further comprising:
an interlayer insulating film formed around the first top insulating film and the second contact by using a material different from the first top insulating film.
10. A magnetic random access memory comprising:
a first wiring;
a second wiring formed above and spaced apart from the first wiring;
a magnetoresistive effect element formed between the first wiring and the second wiring, connected to the second wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer;
a first side insulating film formed on a side surface of the first wiring;
a first top insulating film formed on an upper surface of the first wiring; and
a first contact formed below the magnetoresistive effect element, having a side surface in contact with a side surface of the first side insulating film, and electrically connected to the magnetoresistive effect element.
11. The memory according to claim 10 , wherein a film thickness of the first top insulating film is larger than a film thickness of the first side insulating film.
12. The memory according to claim 10 , wherein a material of the first top insulating film is the same as a material of the first side insulating film.
13. The memory according to claim 10 , further comprising:
an interlayer insulating film formed around the first side insulating film and the first contact by using a material different from the first side insulating film.
14. The memory according to claim 10 , wherein the first wiring runs in a magnetic hard axis direction of the magnetoresistive effect element.
15. The memory according to claim 10 , further comprising:
an interlayer insulating film having a trench in which the first side insulating film and the first wiring are formed; and
an insulating film formed on a bottom surface of the first wiring in the trench by using the same material as the first side insulating film.
16. The memory according to claim 15 , further comprising:
a third wiring formed in contact with a lower surface of the magnetoresistive effect element, having the same planar shape as the magnetoresistive effect element, and having a bottom surface in direct contact with an upper surface of the first contact and an upper surface of the first top insulating film.
17. The memory according to claim 10 , wherein the first side insulating film is a magnetic insulating material.