Magnetic random access memory and write method of the same

1. A spin transfer type magnetic random access memory comprising:

a magnetoresistive effect element including a fixed layer, a recording layer, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, magnetizations in the fixed layer and the recording layer being perpendicular to a film surface;

a source line connected to one terminal of the magnetoresistive effect element;

a transistor having a current path whose one end is connected to the other terminal of the magnetoresistive effect element;

a bit line connected to the other end of the current path of the transistor, and running parallel to the source line; and

a source/sinker which supplies a write current between the source line and the bit line via the magnetoresistive effect element and the transistor, a direction in which a magnetic field generated by the write current having passed through the bit line is applied to the magnetoresistive effect element being opposite to a direction of the write current passing through the magnetoresistive effect element.

2. The memory according to claim 1 , wherein

the bit line is positioned beside the magnetoresistive effect element, and

the magnetic field generated by the write current having passed through the bit line positioned beside the magnetoresistive effect element is applied to the magnetoresistive effect element.

3. The memory according to claim 2 , wherein a central point of a film thickness of the bit line matches that of a film thickness of the recording layer.

4. The memory according to claim 1 , wherein the magnetic field is applied in a direction to assist magnetization reversal caused in the recording layer by spin transfer torque.

5. The memory according to claim 1 , wherein

when writing first data in the magnetoresistive effect element, the write current is supplied from the fixed layer to the recording layer, and the magnetic field is applied form the recording layer to the fixed layer, and

when writing second data in the magnetoresistive effect element, the write current is supplied from the recording layer to the fixed layer, and the magnetic field is applied from the fixed layer to the recording layer.

6. The memory according to claim 1 , wherein the recording layer is positioned closer to the source line than the fixed layer.

7. The memory according to claim 1 , wherein an element region in which the transistor is formed is formed obliquely to the direction in which the source line and the bit line run.

8. The memory according to claim 1 , wherein the source line comprises a plurality of source lines, the bit line comprises a plurality of bit lines, and the plurality of source lines and the plurality of bit lines are alternately arranged parallel to a substrate surface.

9. The memory according to claim 1 , further comprising a sidewall insulating film formed on a side surface of the magnetoresistive effect element, and brought into direct contact with the bit line.

10. The memory according to claim 1 , wherein the source/sinker comprises a plurality of sources/sinkers, and the plurality of sources/sinkers are connected to both ends of the source line and both ends of the bit line.

11. The memory according to claim 1 , wherein

the source/sinker comprises a plurality of sources/sinkers, the source line comprises a plurality of source lines, and the bit line comprises a plurality of bit lines,

the sources/sinkers are connected to both ends of the plurality of source lines, and

the sources/sinkers are connected to both ends of the plurality of bit lines.

12. The memory according to claim 1 , in which the source line comprises a plurality of source lines, and the bit line comprises a plurality of bit lines, and

which further comprises:

a plurality of first switches each connected to one end of a corresponding one of the plurality of source lines,

a plurality of second switches each connected to the other end of a corresponding one of the plurality of source lines,

a plurality of third switches each connected to one end of a corresponding one of the plurality of bit lines, and

a plurality of fourth switches each connected to the other end of a corresponding one of the plurality of bit lines, and

in which the source/sinker comprises a first source/sinker connected to the plurality of first switches, a second source/sinker connected to the plurality of second switches, a third source/sinker connected to the plurality of third switches, and a fourth source/sinker connected to the plurality of fourth switches.

13. The memory according to claim 1 , wherein

a material of the recording layer contains one of Tb, Co, and Fe, and

a magnetization holding force of the recording layer is lowered by heat generated when the write current passes through the magnetoresistive effect element, thereby assisting magnetization reversal in the recording layer.

14. A write method of a spin transfer type magnetic random access memory including

a magnetoresistive effect element including a fixed layer, a recording layer, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, magnetizations in the fixed layer and the recording layer being perpendicular to a film surface;

a source line connected to one terminal of the magnetoresistive effect element,

a transistor having a current path whose one end is connected to the other terminal of the magnetoresistive effect element, and

a bit line connected to the other end of the current path of the transistor, and running parallel to the source line,

the method comprising supplying a write current between the source line and the bit line via the magnetoresistive effect element and the transistor, a direction in which a magnetic field generated by the write current having passed through the bit line is applied to the magnetoresistive effect element being opposite to a direction of the write current passing through the magnetoresistive effect element.

15. The method according to claim 14 , wherein

the bit line is positioned beside the magnetoresistive effect element, and

the magnetic field generated by the write current having passed through the bit line positioned beside the magnetoresistive effect element is applied to the magnetoresistive effect element.

16. The method according to claim 14 , wherein the magnetic field is applied in a direction to assist magnetization reversal caused in the recording layer by spin transfer torque.

17. The method according to claim 14 , wherein

a material of the recording layer contains one of Tb, Co, and Fe, and

a magnetization holding force of the recording layer is lowered by heat generated when the write current passes through the magnetoresistive effect element, thereby assisting magnetization reversal in the recording layer.

18. The method according to claim 14 , wherein

when writing first data in the magnetoresistive effect element, the write current is supplied from the fixed layer to the recording layer, and the magnetic field is applied form the recording layer to the fixed layer, and

when writing second data in the magnetoresistive effect element, the write current is supplied from the recording layer to the fixed layer, and the magnetic field is applied from the fixed layer to the recording layer.

19. The method according to claim 14 , wherein the recording layer is positioned closer to the source line than the fixed layer.

20. The method according to claim 14 , wherein the write current bidirectionally flows through both the source line and the bit line.