Magnetoresistive element
View Patent ↗According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
1. A magnetoresistive element comprising:
a first magnetic layer;
a second magnetic layer;
a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and
a first underlayer containing B and provided on an opposite side of a surface of the second magnetic layer on which the nonmagnetic layer is provided, wherein the first underlayer comprises an amorphous structure, and is nonmagnetic.
2. The magnetoresistive element according to claim 1 , wherein the first underlayer further contains Hf or Ta.
3. The magnetoresistive element according to claim 1 , wherein the first underlayer further contains a compound of B and Hf, or a compound of B and Ta.
4. The magnetoresistive element according to claim 1 , further comprising a second underlayer provided between the second magnetic layer and the first underlayer.
5. The magnetoresistive element according to claim 4 , wherein the second underlayer contains one of Ir, Pd, or Pt.
6. The magnetoresistive element according to claim 4 , wherein the second underlayer is thinner than the first underlayer.
7. The magnetoresistive element according to claim 1 , wherein the first magnetic layer has magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, and the second magnetic layer has magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction.
8. The magnetoresistive element according to claim 1 , wherein the nonmagnetic layer contains an insulator.
9. The magnetoresistive element according to claim 8 , wherein the insulator contains a MgO.
10. The magnetoresistive element according to claim 1 , wherein the nonmagnetic layer is a tunnel barrier layer.