Magnetoresistive element and magnetic memory using the same
View Patent ↗According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
1. A semiconductor storage device comprising:
a first layer including a first magnetic layer;
a second layer; and
a third layer including a first nonmagnetic layer and provided between the first layer and the second layer,
wherein the second layer includes a second magnetic layer, a third magnetic layer, and a second nonmagnetic layer formed between the second magnetic layer and the third magnetic layer,
the second magnetic layer includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W,
the second magnetic layer includes a first magnetic material, a second magnetic material, and a first nonmagnetic material formed between the first magnetic material and the second magnetic material,
the first magnetic material is in contact with the third layer, and
the second magnetic material is Co.
2. The element according to claim 1 , further comprising an underlying layer formed on a surface of the first layer, which is opposite to a surface on which the third layer is formed.
3. The element according to claim 1 , wherein the first magnetic material includes Co and Fe.
4. The element according to claim 1 , wherein the first magnetic material includes one of a CoFe alloy and an alloy (Co 100-x —Fe x ) 100-y B y containing Co, Fe, and B where x≧50 at % and 0<y≦30 at %.
5. The element according to claim 1 , wherein the first nonmagnetic material includes at least one of Zr, Nb, Mo, Hf, Ta, and W.
6. The element according to claim 1 , wherein the second nonmagnetic layer includes Ru.
7. The element according to claim 6 , further comprising an underlying layer formed on a surface of the first layer, which is opposite to a surface on which the third layer is formed,
wherein a film thickness of the Ru is 0.4 (inclusive) to 1.0 (inclusive) nm.
8. The element according to claim 6 , further comprising an underlying layer formed on a surface of the second layer, which is opposite to a surface on which the third layer is formed,
wherein a film thickness of the Ru is 0.7 (inclusive) to 1.3 (inclusive) nm.
9. The element according to claim 1 , wherein the second magnetic layer and the third magnetic layer have antiparallel magnetization directions.
10. The element according to claim 1 , wherein the first magnetic material and the second magnetic material have parallel magnetization directions.
11. The element according to claim 1 , wherein saturation magnetization and a film thickness of the third magnetic layer are adjusted to cancel a shift of a switching field in the first layer by a strayed magnetic field from the second magnetic layer.
12. The element according to claim 1 , further comprising an interface layer formed between the first layer and the third layer and having high polarization.
13. The element according to claim 12 , wherein the interface layer includes Co and Fe.
14. The element according to claim 12 , wherein the interface layer includes an alloy (Co 100-x —Fe x ) 100-y B y containing Co, Fe, and B where x≧20 at % and 0<y≦30 at %.
15. The element according to claim 1 , further comprising an interface layer formed between the second layer and the third layer and having high polarization.
16. The element according to claim 15 , wherein the interface layer includes Co and Fe.
17. The element according to claim 15 , wherein the interface layer includes an alloy (Co 100-x —Fe x ) 100-y B y containing Co, Fe, and B where x≧20 at % and 0<y≦30 at %.
18. The element according to claim 1 , wherein the third magnetic layer is thicker than the second magnetic layer.
19. The element according to claim 1 , wherein the first, second and third layers form a magnetoresistive element.
20. The element according to claim 1 , wherein the first layer includes a storage layer, and the second layer includes a reference layer.