A memory system has a first cache memory comprising a volatile memory, a second cache memory comprising a non-volatile memory with access speed slower than access speed of the volatile memory, and a reconfiguration control circuitry to switch between a first mode that uses the second cache memory as a cache memory in a lower layer than the first cache memory and a second mode that uses the first cache memory and the second cache memory as cache memories in an identical memory layer.
1. A memory system comprising:
a first cache memory comprising a volatile memory;
a second cache memory comprising a non-volatile memory with access speed slower than access speed of the volatile memory; and
a reconfiguration control circuitry to switch between a first mode that uses the second cache memory as a cache memory in a lower layer than the first cache memory and a second mode that uses the first cache memory and the second cache memory as cache memories in an identical memory layer.
2. The memory system according to claim 1 , further comprising a switching information storage to store switching information on the first mode or the second mode.
3. The memory system according to claim 1 , further comprising:
a first control circuitry to access the first cache memory during the first mode and to stop to access the first cache memory during the second mode; and
a second control circuitry to access the second cache memory during the first mode and to access the first and second cache memories during the second mode.
4. The memory system according to claim 3 , wherein
the second control circuitry accesses the second cache memory in units of data amounts larger than units used to access the first cache memory during the second mode.
5. The memory system according to claim 4 , wherein
the second control circuitry accesses the first cache memory in units of words and accesses the second cache memory in units of cache lines during the second mode.
6. The memory system according to claim 3 , wherein
the second control circuitry stores all of data stored to the first cache memory to the second cache memory during the second mode.
7. The memory system according to claim 3 , wherein
the second control circuitry stores data to the first cache memory and the second cache memory exclusively during the second mode.
8. The memory system according to claim 3 , wherein
the second control circuitry controls whether to store word data to be written, to the first cache memory, based on an access frequency by a processor during the second mode.
9. The memory system according to claim 3 , wherein
the first control circuitry accesses the first cache memory in units of cache lines during the first mode, whereas the second control circuitry accesses the second cache memory in units of cache lines during the first mode.
10. The memory system according to claim 3 , wherein
the reconfiguration control circuitry communicates switching information on the first mode or the second mode to the first control circuitry and the second control circuitry.
11. The memory system according to claim 1 , wherein
the first cache memory comprises:
a first cache data circuitry comprising a first part of the volatile memory; and
a first tag circuitry comprising a second part of the volatile memory and to store address information corresponding to data stored in the first cache data circuitry, and
the second cache memory comprises:
a second cache data circuitry comprising the non-volatile memory; and
a second tag circuitry comprising a volatile memory and to store address information corresponding to data stored in the second cache data circuitry.
12. The memory system according to claim 1 , wherein
the reconfiguration control circuitry switches between the first mode and the second mode based on at least an access frequency to the first cache memory and an access frequency to the second cache memory.
13. The memory system according to claim 1 , wherein
the volatile memory is a static random access memory (SRAM), whereas the non-volatile memory is a magnetoresistive random access memory (MRAM).
14. A memory system comprising:
a first cache memory comprising a volatile memory that does not require error correction processing during reading;
a second cache memory comprising a non-volatile memory with access speed slower than access speed of the volatile memory, the non-volatile memory requiring error correction processing during reading;
a reconfiguration control circuitry to switch between a first mode that uses the second cache memory as a cache memory in a lower layer than the first cache memory and a second mode that uses the first cache memory and the second cache memory as cache memories in an identical memory layer; and
an error correction circuitry to carry out the error correction processing on data read from the second cache memory.
15. The memory system according to claim 14 , further comprising:
a first control circuitry to access the first cache memory during the first mode and to stop to access the first cache memory during the second mode; and
a second control circuitry to access the second cache memory during the first mode and to access the first and second cache memories during the second mode.
16. The memory system according to claim 15 , wherein
the second control circuitry accesses the second cache memory in units of data amounts larger than units used to access the first cache memory during the second mode.
17. The memory system according to claim 15 , wherein
the second control circuitry stores all of data stored to the first cache memory to the second cache memory during the second mode.
18. The memory system according to claim 14 , wherein
the first cache memory comprises:
a first cache data circuitry comprising a first part of the volatile memory; and
a first tag circuitry comprising a second part of the volatile memory and to store address information corresponding to data stored in the first cache data circuitry, and
the second cache memory comprises:
a second cache data circuitry comprising the non-volatile memory; and
a second tag circuitry comprising a volatile memory and to store address information corresponding to data stored in the second cache data circuitry.
19. The memory system according to claim 14 , wherein
the reconfiguration control circuitry switches between the first mode and the second mode based on at least an access frequency to the first cache memory and an access frequency to the second cache memory.
20. The memory system according to claim 14 , wherein
the volatile memory is a static random access memory (SRAM), whereas the non-volatile memory is a magnetoresistive random access memory (MRAM).