Integrated semiconductor device

1. An integrated semiconductor device comprising:

a plurality of semiconductor elements having different integrated element circuits or different sizes;

an insulating material arranged between the semiconductor elements;

an organic insulating film formed directly on the semiconductor elements and the insulating material;

a fine thin-layer wiring formed directly on the organic insulating film and directly contacting the semiconductor elements;

a plurality of first input/output electrodes; and

a plurality of first bump electrodes, each of the first bump electrodes being respectively formed on one of the first input/output electrodes, wherein

all of the first input/output electrodes are disposed only on an area of the insulating material.

2. The device according to claim 1 , wherein

the insulating material includes a first surface on which the fine thin-layer wiring is formed, a second surface that opposes the first surface on a back surface of the integrated semiconductor device, and a through hole formed through the insulating material that connects the first surface and the second surface,

the first input/output electrode is arranged on the first surface,

a second input/output electrode is arranged on the second surface, and

a conductive member formed in the through hole contacting the first and second input/output electrodes.

3. The device according to claim 1 , wherein at least one of the semiconductor elements is an electromechanical element.

4. The device according to claim 1 , wherein the device is flip-chip mounted on a circuit wiring board by use of the first bump electrode.

5. The device according to claim 2 , wherein a second bump electrode is formed on the second input/output electrode.

6. The device according to claim 1 , wherein the insulating material is formed of at least one of epoxy resin, polyimide resin, and benzocyclobutene (BCB) that contain at least a silica filler.

7. The device according to claim 1 , wherein the first bump electrode is formed of a metal containing at least one of Ti, Ni, Al, Cu, Au, Ag, Pb, Sn, Pd, and W, or an alloy thereof.

8. An integrated semiconductor device comprising:

an integrated circuit with two semiconductor elements separated by an insulating material;

an organic insulating film formed over the two semiconductor elements;

a wiring directly connected to at least one of the semiconductor elements;

a plurality of input/output electrodes; and

a plurality of first bump electrodes, each of the first bump electrodes being respectively formed on one of the input/output electrodes, wherein

all of the input/output electrodes are arranged only on the insulating material disposed between the semiconductor elements, and electrically connected to the at least one wiring.