Magnetoresistive element
View Patent ↗According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
1. A magnetoresistive element comprising:
a first magnetic layer having an invariable magnetization direction;
a second magnetic layer having a variable magnetization direction and having a film thickness of 2 nm or less;
a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer; and
a buffer layer of a nitrogen compound provided in contact with a surface of the second magnetic layer, which is opposite to a surface of the second magnetic layer where the tunnel barrier layer is provided,
the second magnetic layer comprising a CoFeB layer containing FeB and CoB at least on the tunnel barrier layer side, and a concentration of FeB in the second magnetic layer being higher than a concentration of CoB in the second magnetic layer.
2. The element of claim 1 , wherein an orientation of the tunnel barrier layer conforms to an orientation of the second magnetic layer.
3. The element of claim 1 , wherein the buffer layer is selected from AlN, ZrN, NbN and SiN.
4. The element of claim 1 , wherein a composition of the buffer layer contains insufficient nitrogen compared with a stoichiometric composition.
5. The element of claim 1 , wherein a damping constant of the second magnetic layer is less than or equal to about 0.005.
6. The element of claim 1 , wherein:
the first magnetic layer comprises a reference layer having magnetic anisotropy in a direction perpendicular to a film surface; and
the second magnetic layer comprises a recording layer having magnetic anisotropy in a direction perpendicular to a film surface.
7. The element of claim 6 , wherein the recording layer comprises a stacked layer structure comprising a first magnetic material layer on the tunnel barrier layer side, a second magnetic material layer on the buffer layer side, and a nonmagnetic layer provided between the first magnetic material layer and the second magnetic material layer.
8. The element of claim 7 , wherein
the first magnetic material layer is the CoFeB layer, and the second magnetic material layer is a CoFe layer, and
a concentration of Fe in the first magnetic material layer is higher than a concentration of Co in the first magnetic material layer, and a concentration of Co in the second magnetic material layer is higher than a concentration of Fe in the second magnetic material layer.
9. The element of claim 6 , wherein the recording layer has a stacked layer structure comprising a first magnetic material layer on the tunnel barrier layer side and a second magnetic material layer on the buffer layer side.
10. The element of claim 9 , wherein
the first magnetic material layer is the CoFeB layer, and the second magnetic material layer is a CoFe layer, and
a concentration of Fe in the first magnetic material layer is higher than a concentration of Co in the first magnetic material layer, and a concentration of Co in the second magnetic material layer is higher than a concentration of Fe in the second magnetic material layer.
11. The element of claim 1 , wherein the second magnetic layer comprises a recording layer having a stacked layer structure with a total thickness of 2 nm or less.
12. A magnetoresistive element comprising:
a first magnetic layer having an invariable magnetization direction;
a second magnetic layer having a variable magnetization direction;
a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer; and
a buffer layer of AlN provided in contact with a surface of the second magnetic layer, which is opposite to a surface of the second magnetic layer where the tunnel barrier layer is provided, the buffer layer containing insufficient nitrogen compared with a stoichiometric composition,
the second magnetic layer comprising a CoFeB layer containing FeB and CoB at least on the tunnel barrier layer side, and a concentration of FeB in the second magnetic layer being higher than a concentration of CoB in the second magnetic layer.
13. The element of claim 12 , wherein an orientation of the tunnel barrier layer conforms to an orientation of the second magnetic layer.
14. The element of claim 12 , wherein a damping constant of the second magnetic layer is less than or equal to about 0.005.
15. The element of claim 14 , wherein the second magnetic layer comprises a recording layer having a stacked layer structure with a total thickness of 2 nm or less.
16. The element of claim 12 , wherein:
the first magnetic layer comprises a reference layer having magnetic anisotropy in a direction perpendicular to a film surface; and
the second magnetic layer comprises a recording layer having magnetic anisotropy in a direction perpendicular to a film surface.
17. The element of claim 16 , wherein the recording layer has a stacked layer structure comprising a first magnetic material layer on the tunnel barrier layer side, a second magnetic material layer on the buffer layer side and a nonmagnetic layer provided between the first magnetic material layer and the second magnetic material layer.
18. The element of claim 17 , wherein
the first magnetic material layer is the CoFeB layer, and the second magnetic material layer is a CoFe layer, and
a concentration of Fe in the first magnetic material layer is higher than a concentration of Co in the first magnetic material layer, and a concentration of Co in the second magnetic material layer is higher than a concentration of Fe in the second magnetic material layer.
19. The element of claim 16 , wherein the recording layer has a stacked layer structure comprising a first magnetic material layer on the tunnel barrier layer side and a second magnetic material layer on the buffer layer side.
20. The element of claim 19 , wherein
the first magnetic material layer is the CoFeB layer, and the second magnetic material layer is a CoFe layer, and
a concentration of Fe in the first magnetic material layer is higher than a concentration of Co in the first magnetic material layer, and a concentration of Co in the second magnetic material layer is higher than a concentration of Fe in the second magnetic material layer.