Magnetoresistive element and magnetic memory using the same
View Patent ↗According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.
1. A magnetoresistive element comprising:
a first magnetic layer having an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization direction;
a second magnetic layer having an axis of easy magnetization perpendicular to a film plane, and a variable magnetization direction; and
a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
wherein the first magnetic layer has a structure in which a first magnetic material film, a nonmagnetic material film, a second magnetic material film, and a third magnetic material film are stacked, the nonmagnetic material film comprising at least one of Ta, Zr, Nb, Mo, Ru, Ti, V, Cr, W, and Hf,
the first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film,
the second magnetic material film has a Co concentration higher than that of the first magnetic material film, and
a current is passed across the first magnetic layer and the second magnetic layer via the nonmagnetic layer so that the magnetization direction of the second magnetic layer varies.
2. The magnetoresistive element according to claim 1 , wherein
the surface of the second magnetic material film where the second magnetic material film contacts the third magnetic material film is higher in Co concentration than the surface of the first magnetic material film where the nonmagnetic layer contacts the first magnetic material film.
3. The magnetoresistive element according to claim 1 , wherein
the thickness of the second magnetic material film is more than 4 Å and is 20 Å or less.
4. The magnetoresistive element according to claim 1 , wherein
the second magnetic layer comprises two films different in material.
5. The magnetoresistive element according to claim 4 , wherein
the two films include a magnetic film and an interface magnetic film, and the interface magnetic film is located between the nonmagnetic layer and the magnetic film.
6. The magnetoresistive element according to claim 5 , wherein
the interface magnetic film includes a structure in which a magnetic material layer and a nonmagnetic material layer are stacked for at least one period.
7. The magnetoresistive element according to claim 1 , further comprising:
a third magnetic layer located on a surface of the first magnetic layer, which is opposite to a surface where the nonmagnetic material layer is located,
wherein the third magnetic layer has a magnetization direction antiparallel to the magnetization direction of the first magnetic layer.
8. The magnetoresistive element according to claim 1 , further comprising:
a fourth magnetic layer located on a surface of the second magnetic layer, which is opposite to a surface where the nonmagnetic material layer is located,
wherein the fourth magnetic layer has a magnetization direction antiparallel to the magnetization direction of the first magnetic layer.
9. The magnetoresistive element according to claim 1 , wherein
the third magnetic material film comprises an artificial lattice structure or an alloy which includes at least one of Fe, Co, and Ni and at least one of Cr, Pt, Pd, Ag, Ir, Rh, Ru, Os, Re, Au, Cu, Gd, Tb, and Dy.
10. The magnetoresistive element according to claim 1 , wherein
the third magnetic material film comprises an alloy which includes at least one of Fe, Co, and Ni and at least one of Pt and Pd.
11. The magnetoresistive element according to claim 1 , wherein
the first magnetic material film includes a structure in which a magnetic material layer and a nonmagnetic material layer are stacked for at least one period.
12. The magnetoresistive element according to claim 1 , wherein
the first magnetic material film comprises a material including at least one of Co, Fe, and Ni, or an alloy in which at least one of B, Al, and Si is added to the material.
13. The magnetoresistive element according to claim 1 , wherein
the second magnetic material film comprises a material which includes Co as the main component and comprises at least one of Fe, Ni, B, Al, Si, Ta, Zr, Nb, Mo, Ru, Ti, V, Cr, W, and Hf.
14. A magnetoresistive element comprising:
a first magnetic layer having an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization direction;
a second magnetic layer having an axis of easy magnetization perpendicular to a film plane, and a variable magnetization direction; and
a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
wherein the first magnetic layer includes a structure in which a first magnetic material film, a nonmagnetic material film, and a second magnetic material film are stacked, the nonmagnetic material film comprising at least one of Ta, Zr, Nb, Mo, Ru, Ti, V, Cr, W, and Hf,
the first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, and the second magnetic material film is provided in contact with the nonmagnetic material film,
the second magnetic material film has a Co concentration higher than that of the first magnetic material film, and
a current is passed across the first magnetic layer and the second magnetic layer via the nonmagnetic layer so that the magnetization direction of the second magnetic layer varies.
15. The magnetoresistive element according to claim 14 , wherein
the surface of the second magnetic material film is higher in Co concentration than the surface of the first magnetic material film where the nonmagnetic layer contacts the first magnetic material film.
16. The magnetoresistive element according to claim 14 , wherein
the thickness of the second magnetic material film is more than 4 Å and is 20 Å or less.
17. A magnetic memory comprising:
a memory cell including the magnetoresistive element according to claim 1 ;
a first interconnect to which one end of the magnetoresistive element is electrically connected; and
a second interconnect to which the other end of the magnetoresistive element is electrically connected.
18. The magnetoresistive element according to claim 17 , further comprising
a select transistor provided between one end of the magnetoresistive element and the first interconnect.