Magnetic random access memory

1. A magnetic random access memory comprising a plurality of magnetoresistance elements each comprising:

a recording layer having magnetic anisotropy perpendicular to a film surface, and a variable magnetization direction;

a reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization direction; and

a first nonmagnetic layer formed between the recording layer and the reference layer,

wherein the recording layer is physically separated for each of the plurality of magnetoresistance elements, and

the reference layer and the first nonmagnetic layer continuously extend over the plurality of magnetoresistance elements;

a first magnetic layer formed in the same plane as that of the recording layer, and

electrically isolated from the recording layer;

a second nonmagnetic layer formed on a surface of the recording layer, which is opposite to a surface on which the first nonmagnetic layer is formed;

a third nonmagnetic layer formed on sidewalls of the recording layer and the second nonmagnetic layer; and

a fourth nonmagnetic layer formed on a sidewall of the third nonmagnetic layer,

wherein the third nonmagnetic layer is in contact with the recording layer, the first magnetic layer, the second nonmagnetic layer, and the fourth nonmagnetic layer.

2. The memory according to claim 1 ,

wherein the first magnetic layer is made of the same material as that forming the recording layer, and has magnetic anisotropy parallel to a film surface.

3. The memory according to claim 1 , wherein a material of the third nonmagnetic layer is the same as that of the first nonmagnetic layer.

4. The memory according to claim 1 , wherein an upper surface of the first nonmagnetic layer has a concave portion above the third nonmagnetic layer.

5. The memory according to claim 1 , wherein the reference layer continuously extends over the plurality of magnetoresistance elements in a first direction, and is physically separated for at least each of the plurality of magnetoresistance elements in a second direction perpendicular to the first direction.

6. The memory according to claim 5 , wherein magnetization directions in adjacent separated reference layers are antiparallel.

7. The memory according to claim 1 , wherein the recording layer is made of one of FeB and CoFeB.

8. The memory according to claim 1 , wherein the reference layer has a perovskite structure in which an electric current flowing parallel to the film surface is smaller than that flowing perpendicularly to the film surface, and which is aligned perpendicularly to the film surface.

9. The memory according to claim 1 , wherein

the second nonmagnetic layer is made of a material containing at least one element selected from the group consisting of Ta, Y, La, Ti, Zr, Hf, Mo, W, Ru, Ir, Pd, Pt, and Al,

the third nonmagnetic layer is made of an oxide containing at least one element selected from the group consisting of Mg, Al, and Si, and

the fourth nonmagnetic layer is made of a nitride containing at least one element selected from the group consisting of Si and Al.

10. The memory according to claim 1 , further comprising:

a selection transistor having a source and a drain, one of which is electrically connected to the recording layer;

a first wiring connected to a gate of the selection transistor and running in the second direction;

a second wiring electrically connected to the reference layer and running in the first direction; and

a third wiring electrically connected to the other of the source and the drain of the selection transistor and running in the first direction,

wherein the recording layer is formed between the first nonmagnetic layer and the selection transistor.