Magnetic random access memory

1. A magnetic random access memory comprising:

a read circuit;

a first bit line connected to the read circuit;

a second bit line;

a cell unit including a magnetoresistive element connected between the first and second bit lines; and

a control circuit that is configured to:

change the first bit line to a floating state after setting the first bit line to a first potential in a first state in which the first and second bit lines are electrically disconnected each other;

set the second bit line to a second potential different from the first potential in the first state;

change from the first state to a second state in which the first and second bit lines are electrically connected each other through the cell unit; and

control the read circuit in the second state so that the read circuit senses a potential of the first bit line.

2. The memory of claim 1 , wherein the cell unit includes:

a switch element with a first terminal serially connected to a second terminal of the magnetoresistive element,

a third terminal of the magnetoresistive element connected to the first bit line, and

a fourth terminal of the switch element connected to the second bit line.

3. The memory of claim 1 , wherein the cell unit includes:

a switch element with a first terminal serially connected to a second terminal of the magnetoresistive element,

a third terminal of the magnetoresistive element connected to the second bit line, and

a fourth terminal of the switch element connected to the first bit line.

4. The memory of claim 1 , wherein the read circuit comprises a sense amplifier that compares the potential of the first bit line and a reference potential.

5. The memory of claim 4 , further comprising a reference unit including a magnetoresistive element, the reference unit generating the reference potential.

6. The memory of claim 1 , wherein the first potential is a ground potential and the second potential is a power source potential.

7. A memory system including the memory of claim 1 as a cache memory.

8. The memory of claim 1 , wherein the second potential is higher than the first potential.

9. The memory of claim 1 , further comprising a write circuit to write data to the magnetoresistive element in the cell unit.

10. The memory of claim 1 , wherein the control circuit changes from the second state to a third state in which the read circuit is electrically disconnected from the first bit line after sensing the potential of the first bit line, and controls the read circuit in the third state so that the read circuit reads data of the magnetoresistive element based on a result of the sensing.

11. The memory of claim 1 , wherein the first bit line extends in parallel with the second bit line.

12. The memory of claim 1 , wherein the potential of the first bit line changes dependent on data of the magnetoresistive element in the second state.

13. The memory of claim 12 , wherein a change of the potential of the first bit line when the magnetoresistive element has a first resistance is larger than a change of the potential of the first bit line when the magnetoresistive element has a second resistance, and the second resistance is higher than the first resistance.

14. A magnetic random access memory comprising:

a read circuit;

a first bit line connected to the read circuit;

a second bit line;

a cell unit including a magnetoresistive element connected between the first and second bit lines; and

a control circuit that is configured to:

change the first bit line to a floating state after setting the first bit line to a first potential in a first state in which the first and second bit lines are electrically disconnected each other;

set the second bit line to a second potential different from the first potential in the first state; and

change from the first state to a second state in which the first and second bit lines are electrically connected each other through the cell unit, wherein the read circuit senses a potential of the first bit line in the second state.

15. The memory of claim 14 , wherein the control circuit changes from the second state to a third state in which the read circuit is electrically disconnected from the first bit line after sensing the potential of the first bit line, and controls the read circuit in the third state so that the read circuit reads data of the magnetoresistive element based on a result of the sensing.

16. The memory of claim 14 , wherein the first bit line extends in parallel with the second bit line.

17. The memory of claim 14 , wherein the potential of the first bit line changes dependent on data of the magnetoresistive element in the second state.

18. The memory of claim 17 , wherein a change of the potential of the first bit line when the magnetoresistive element has a first resistance is larger than a change of the potential of the first bit line when the magnetoresistive element has a second resistance, and the second resistance is higher than the first resistance.

19. The memory of claim 14 , wherein the cell unit includes:

a switch element with a first terminal serially connected to a second terminal of the magnetoresistive element,

a third terminal of the magnetoresistive element connected to the first bit line, and

a fourth terminal of the switch element connected to the second bit line.

20. The memory of claim 14 , wherein the cell unit includes:

a switch element with a first terminal serially connected to a second terminal of the magnetoresistive element,

a third terminal of the magnetoresistive element connected to the second bit line, and

a fourth terminal of the switch element connected to the first bit line.