Magnetic memory device and write/read method of the same

1. A magnetic memory device comprising:

a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell;

a first write element formed at one end portion of the first magnetic line;

a first read element formed at the other end portion of the first magnetic line; and

a register configured to temporarily store data, which is read by said first read element, of a first cell at the other end portion of the first magnetic line, wherein

the first write element is configured to write the temporally stored data into a second cell at the one end portion of the first magnetic line.

2. The device according to claim 1 , wherein

the first write element is a line separated from the first magnetic line, and

information is written in a target cell positioned at one end portion of the first magnetic line by applying a magnetic field of an electric current flowing through the line to the target cell.

3. The device according to claim 1 , wherein

the first read element is a magnetoresistive effect element including a fixed layer, a recording layer opposing a target cell positioned at the other end portion of the first magnetic line, and a nonmagnetic layer formed between the fixed layer and the recording layer, and

information in the target cell is read out by supplying an electric current to the first read element by reversing magnetization in the recording layer in accordance with a magnetization direction in the target cell.

4. The device according to claim 1 , wherein

the first read element is a magnetoresistive effect element including a fixed layer, a target cell positioned at the other end portion of the first magnetic line, and a nonmagnetic layer formed in contact with the target cell between the fixed layer and the target cell, and

information in the target cell is read out by supplying an electric current to the first read element.

5. The device according to claim 1 , further comprising a current source which applies an electric current which moves the domain walls in a direction from one end portion to the other end portion of the first magnetic line.

6. The device according to claim 1 , further comprising:

a second magnetic line which is formed above the first magnetic line and has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell;

a second write element formed at one end portion of the second magnetic line; and

a second read element formed at the other end portion of the second magnetic line.

7. The device according to claim 1 , further comprising a second magnetic line which is formed above the first magnetic line and has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell;

wherein the first write element is formed between one end portion of the first magnetic line and one end portion of the second magnetic line, and the first read element is formed between the other end portion of the first magnetic line and the other end portion of the second magnetic line.

8. The device according to claim 1 , wherein a shape of the first magnetic line is an inverted U shape.

9. The device according to claim 1 , further comprising:

a second read element formed at one end portion of the first magnetic line, and sandwiching the first magnetic line together with the first write element;

a second write element formed at the other end portion of the first magnetic line, and sandwiching the first magnetic line together with the first read element;

a first current source which applies an electric current which moves the domain walls in a direction from one end portion to the other end portion of the first magnetic line; and

a second current source which applies an electric current which moves the domain walls in a direction from the other end portion to one end portion of the first magnetic line.

10. A write method of a magnetic memory device including

a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell,

a first write element formed at one end portion of the first magnetic line, and

a first read element formed at the other end portion of the first magnetic line, comprising:

checking whether a target cell as an object of write exists at one end portion of the first magnetic line;

writing information in the target cell by using the first write element, if a result of the check indicates that the target cell exists at one end portion of the first magnetic line;

reading out information from a first cell at the other end portion of the first magnetic line by using the first read element, if the result of the check indicates that the target cell does not exist at one end portion of the first magnetic line;

temporally storing the information of the first cell;

moving the domain walls by one cell by supplying an electric current to the first magnetic line, and writing the information of the first cell, which is temporally stored, into a second cell at one end portion of the first magnetic line by using the first write element; and

checking whether the second cell is the target cell as the object of write, after moving the domain walls by one cell by supplying the electric current to the first magnetic line.

11. The method according to claim 10 , wherein

the first write element is a line separated from the first magnetic line, and

the information is written in the target cell by applying a magnetic field of an electric current flowing through the line to the target cell.

12. The method according to claim 10 , wherein

the first read element is a magnetoresistive effect element including a fixed layer, a recording layer opposing the first cell, and a nonmagnetic layer formed between the fixed layer and the recording layer, and

the information in the first cell is read out by supplying an electric current to the first read element by reversing magnetization in the recording layer in accordance with a magnetization direction in the first cell.

13. The method according to claim 10 , wherein

the first read element is a magnetoresistive effect element including a fixed layer, the first cell, and a nonmagnetic layer formed in contact with the first cell between the fixed layer and the first cell, and

the information in the first cell is read out by supplying an electric current to the first read element.

14. The method according to claim 10 , wherein the magnetic memory device further includes:

a second read element formed at one end portion of the first magnetic line, and sandwiching the first magnetic line together with the first write element;

a second write element formed at the other end portion of the first magnetic line, and sandwiching the first magnetic line together with the first read element;

a first current source which applies the electric current which moves the domain walls in a direction from one end portion to the other end portion of the first magnetic line; and

a second current source which applies the electric current which moves the domain walls in a direction from the other end portion to one end portion of the first magnetic line.

15. The method according to claim 10 , wherein the information is written in the target cell by applying an electric current in a direction perpendicular to film surfaces of the target cell and the first write element.

16. A read method of a magnetic memory device including

a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell,

a first write element formed at one end portion of the first magnetic line, and

a first read element formed at the other end portion of the first magnetic line, comprising:

checking whether a target cell as an object of read exists at the other end portion of the first magnetic line;

reading out information from the target cell by using the first read element, if a result of the check indicates that the target cell exists at the other end portion of the first magnetic line;

reading out information from a first cell at the other end portion of the first magnetic line by using the first read element, if the result of the check indicates that the target cell does not exist at the other end portion of the first magnetic line;

temporally storing the information of the first cell;

moving the domain walls by one cell by supplying an electric current to the first magnetic line, and writing the information of the first cell, which is temporally stored, into a second cell at one end portion of the first magnetic line by using the first write element; and

checking whether a third cell at the other end portion of the first magnetic line is the target cell as the object of read, after moving the domain walls by one cell by supplying the electric current to the first magnetic line.

17. The method according to claim 16 , wherein

the first write element is a line separated from the first magnetic line, and

the information of the first cell is written in the second cell by applying a magnetic field of an electric current flowing through the line to the second cell.

18. The method according to claim 16 , wherein

the first read element is a magnetoresistive effect element including a fixed layer, a recording layer opposing the target cell, and a nonmagnetic layer formed between the fixed layer and the recording layer, and

the information in the target cell is read out by supplying an electric current to the first read element by reversing magnetization in the recording layer in accordance with a magnetization direction in the target cell.

19. The method according to claim 16 , wherein

the first read element is a magnetoresistive effect element including a fixed layer, the target cell, and a nonmagnetic layer formed in contact with the target cell between the fixed layer and the target cell, and

the information in the target cell is read out by supplying an electric current to the first read element.

20. The method according to claim 16 , wherein the magnetic memory device further includes:

a second read element formed at one end portion of the first magnetic line, and sandwiching the first magnetic line together with the first write element;

a second write element formed at the other end portion of the first magnetic line, and sandwiching the first magnetic line together with the first read element;

a first current source which applies the electric current which moves the domain walls in a direction from one end portion to the other end portion of the first magnetic line; and

a second current source which applies the electric current which moves the domain walls in a direction from the other end portion to one end portion of the first magnetic line.