Magnetoresistive element and magnetic memory
A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.
1. A magnetoresistive element, comprising:
a first layer having a CsCl structure and containing Co x Al 100-x where 46 atomic % ≤x <56 atomic %;
a first magnetic layer;
a first nonmagnetic layer between the first layer and the first magnetic layer; and
a second magnetic layer, which is disposed between the first layer and the first nonmagnetic layer and contains Mn and Ga.
2. The magnetoresistive element according to claim 1 , wherein the first layer has a surface oriented in a (001) plane and facing the second magnetic layer.
3. The magnetoresistive element according to claim 1 , wherein the second magnetic layer has a magnetization direction that is changeable by a current flowing between the first magnetic layer and the second magnetic layer.
4. The magnetoresistive element according to claim 1 , further comprising:
a third magnetic layer disposed in a portion between the first magnetic layer and the first nonmagnetic layer or a portion between the second magnetic layer and the first nonmagnetic layer.
5. The magnetoresistive element according to claim 4 , wherein the third magnetic layer contains at least one element of Co and Fe.
6. The magnetoresistive element according to claim 1 , further comprising:
a fourth magnetic layer; and
a second nonmagnetic layer,
wherein the first magnetic layer is disposed between the fourth magnetic layer and the first nonmagnetic layer, and the second nonmagnetic layer is disposed between the first magnetic layer and the fourth magnetic layer.
7. The magnetoresistive element according to claim 6 , satisfying the following relationship:
Ms 1 ×t 1 <Ms 4 ×t 4 ,
where t 1 and Ms 1 represent thickness and saturation magnetization of the first magnetic layer, respectively, and t 4 and Ms 4 represent thickness and saturation magnetization of the fourth magnetic layer, respectively.
8. The magnetoresistive element according to claim 1 , wherein the first magnetic layer includes at least one of:
a second layer containing at least one element of Fe, Co, and Ni, and at least one element of Tb, Dy, and Gd;
a third layer containing at least one element of Fe, Co, Ni, and Cu, and at least one element of Pt, Pd, Rh, and Au; and
a stack structure including a fourth layer and a fifth layer, the fourth layer including at least one element of Fe, Co, and Ni, and the fifth layer including at least one element of Cr, Pt, Pd, Ir, Rh, Ru, Os, Re, Au, and Cu.
9. A magnetic memory, comprising:
the magnetoresistive element according to claim 1 ;
a first wiring electrically connected to the first magnetic layer of the magnetoresistive element; and
a second wiring electrically connected to the second magnetic layer of the magnetoresistive element.
10. The memory according to claim 9 , wherein the first layer of the magnetoresistive element has a surface oriented in a (001) plane and facing the second magnetic layer.
11. The memory according to claim 9 , wherein the second magnetic layer has a magnetization direction that is changeable by a current flowing between the first magnetic layer and the second magnetic layer.
12. The memory according to claim 9 , further comprising:
a third magnetic layer disposed in a portion between the first magnetic layer and the first nonmagnetic layer or a portion between the second magnetic layer and the first nonmagnetic layer.
13. The memory according to claim 12 , wherein the third magnetic layer contains at least one element of Co and Fe.
14. The memory according to claim 9 , further comprising:
a fourth magnetic layer; and
a second nonmagnetic layer,
wherein the first magnetic layer is disposed between the fourth magnetic layer and the first nonmagnetic layer, and the second nonmagnetic layer is disposed between the first magnetic layer and the fourth magnetic layer.
15. The memory according to claim 14 , satisfying the following relationship:
Ms 1 ×t 1 <Ms 4 ×t 4 ,
where t 1 and Ms 1 represent thickness and saturation magnetization of the first magnetic layer, respectively, and t 4 and Ms 4 represent thickness and saturation magnetization of the fourth magnetic layer, respectively.
16. The memory according to claim 9 , wherein the first magnetic layer includes at least one of:
a second layer containing at least one element of Fe, Co, and Ni, and at least one element of Tb, Dy, and Gd;
a third layer containing at least one element of Fe, Co, Ni, and Cu, and at least one element of Pt, Pd, Rh, and Au; and
a stack structure including a fourth layer and a fifth layer, the fourth layer including at least one element of Fe, Co, and Ni, and the fifth layer including at least one element of Cr, Pt, Pd, Ir, Rh, Ru, Os, Re, Au, and Cu.