Magnetoresistive effect element
View Patent ↗A magnetoresistive element includes first, second, and third fixed layers, first, second, and third spacer layers, and a free layer. The first fixed layer is made of a ferromagnetic material and having an invariable magnetization direction. The first spacer layer is formed on the first fixed layer and made of an insulator. The free layer is formed on the first spacer layer, made of a ferromagnetic material, and having a variable magnetization direction. The second spacer layer is formed on the free layer and made of a nonmagnetic material. The second fixed layer is formed on the second spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction. The third spacer layer is formed below the first fixed layer and made of a nonmagnetic material. The third fixed layer is formed below the third spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction.
1. A magnetoresistive effect element comprising:
a first fixed layer made of a ferromagnetic material with a constant magnetization direction;
a first spacer layer formed on the first fixed layer and made of an insulator;
a free layer formed on the first spacer layer and made of a ferromagnetic material with a variable magnetization direction;
a second spacer layer formed on the free layer and made of a nonmagnetic material;
a second fixed layer formed on the second spacer layer, and made of a ferromagnetic material with a constant magnetization direction;
a third spacer layer formed below the first fixed layer and made of a nonmagnetic material; and
a third fixed layer formed below the third spacer layer, and made of a ferromagnetic material with a constant magnetization direction,
wherein the magnetization directions of the first fixed layer, the second fixed layer, the third fixed layer, and the free layer are perpendicular to the layer planes,
wherein the magnetization direction of the first fixed layer is adjusted by an electric current flowing between the second fixed layer and the third fixed layer, and
wherein the magnetization directions of the first fixed layer and the third fixed layer are the same as each other.
2. The element of claim 1 , wherein a coercive force of the first fixed layer is smaller than those of the second fixed layer and the third fixed layer.
3. The element of claim 1 , wherein the third spacer layer comprises at least one of Ti, V, Cr, Cu, Zr, Nb, Mo, Ta, W, Re, Pt, and Au.
4. A magnetoresistive effect element, comprising:
a first fixed layer made of a ferromagnetic material with a constant magnetization direction;
a first space layer formed on the first fixed layer and made of an insulator;
a free layer formed on the first spacer layer and made of a ferromagnetic material with a variable magnetization direction;
a second spacer layer formed on the free layer and made of a nonmagnetic material;
a second fixed layer formed on the second spacer layer, and made of a ferromagnetic material with a constant magnetization direction;
a third spacer layer formed below the first fixed layer and made of a nonmagnetic material; and
a third fixed layer formed below the third spacer layer, and made of a ferromagnetic material with a constant magnetization direction,
wherein magnetization directions in the first fixed layer and the free layer are perpendicular to the layer planes, and magnetization directions in the second fixed layer and the third fixed layer are of in-plane magnetization.
5. A magnetoresistive effect element comprising:
a first fixed layer made of a ferromagnetic material with a constant magnetization direction;
a free layer made of a ferromagnetic material with a variable magnetization direction;
a first spacer layer formed between the first fixed layer and the free layer and made of an insulator;
a second spacer layer formed on a surface of the free layer opposite to a surface on which the first spacer layer is formed, and made of a nonmagnetic material;
a second fixed layer formed on a surface of the second spacer layer opposite to a surface on which the free layer is formed, with a constant magnetization direction;
a third spacer layer formed on a surface of the first fixed layer opposite to a surface on which the first spacer layer is formed, and made of a nonmagnetic material; and
a third fixed layer formed on a surface of the third spacer layer opposite to a surface on which the first fixed layer is formed with a constant magnetization direction,
wherein the magnetization directions of the first fixed layer, the second fixed layer, the third fixed layer, and the free layer are perpendicular to the layer planes,
wherein the magnetization direction of the first fixed layer is adjusted by an electric current flowing between the second fixed layer and the third fixed layer, and
wherein the magnetization directions of the first fixed layer and the third fixed layer are the same as each other.
6. The element of claim 5 , wherein a coercive force of the first fixed layer is smaller than those of the second fixed layer and the third fixed layer.
7. The element of claim 5 , wherein the third spacer layer comprises at least one of Ti, V, Cr, Cu, Zr, Nb, Mo, Ta, W, Re, Pt, and Au.
8. A magnetoresistive effect element, comprising
a first fixed layer made of a ferromagnetic material with a constant magnetization direction;
a free layer made of a ferromagnetic material with a variable magnetization direction;
a first spacer layer formed between the first fixed layer and the free layer and made of an insulator;
a second spacer layer formed on a surface of the free layer opposite to a surface on which the first spacer layer is formed, and made of a nonmagnetic material;
a second fixed layer formed on a surface of the second spacer layer opposite to a surface on which the free layer is formed with a constant magnetization direction;
a third spacer layer formed on a surface of the first fixed layer opposite to a surface on which the first spacer layer is formed and made of a nonmagnetic material; and
a third fixed layer formed on a surface of the third spacer layer opposite to a surface on which the first fixed layer is formed with a constant magnetization direction,
wherein magnetization directions in the first fixed layer and the free layer are perpendicular to the layer planes, and magnetization directions in the second fixed layer and the third fixed layer are of in-plane magnetization.