Magnetic memory device

1. A magnetic memory device comprising:

a semiconductor substrate;

a magnetization fixed layer provided above a surface of the semiconductor substrate and having a fixed magnetization direction;

a first magnetization free layer provided above the magnetization fixed layer, having variable magnetization direction, and having an easy magnetization axis which extends along a plane intersecting the surface of the semiconductor substrate and along a direction neither parallel nor perpendicular to the surface of the semiconductor substrate;

a second magnetization free layer provided above the first magnetization free layer, having a magnetization that antiferromagnetically couples with the first magnetization free layer when no external magnetic field is applied;

a first write line provided above and electrically connected to the second magnetization free layer, and extending in a direction that pierces the plane; and

a second write line facing at least one of the first magnetization free layer and the second magnetization free layer, and extending along the surface of the semiconductor substrate and the plane and in a direction perpendicular to the first write line.

2. The device according to claim 1 , wherein

the aspect ratio of the first magnetization free layer and the second magnetization free layer is 1 or higher.

3. The device according to claim 1 , wherein

a surface of the first magnetization free layer which faces the second magnetization free layer and a surface of the second magnetization free layer which faces the first magnetization free layer are rectangular which extend along the first write line.

4. The device according to claim 1 , wherein

the easy magnetization axis of the first magnetization free layer and an easy magnetization axis of the second magnetization free layer are substantially inclined 45 degree from the surface of the semiconductor substrate.

5. The device according to claim 1 , wherein

a magnetization direction of the magnetization fixed layer is along the easy magnetization axis of the first magnetization free layer and an easy magnetization axis of the second magnetization free layer.

6. The device according to claim 1 , wherein

the first write line and the second write line intersect each other and extend along the surface of the semiconductor substrate.

7. The device according to claim 1 , wherein an edge that connects an upper surface and side surface of the second magnetization free layer is cut off to form a beveled corner.

8. The device according to claim 1 further comprising:

a first write current circuit connected to the first write line; and

a second write current circuit connected to the second write line;

wherein, the first write current circuit supplies a first current to the first write line, the second write current circuit supplies a second current to the second write line with supply of the first current maintained, the supply of the first current is stopped with supply of the second current maintained, and the supply of the second current is stopped without the supply of the first current.

9. The device according to claim 1 further comprising:

a third write line extending parallel to the second write line, the second write line and the third write line sandwiching the second magnetization free layer.

10. The device according to claim 9 , wherein

the second write line and the third write line are supplied with currents flowing in opposite directions from each other in a process of reversing magnetization of the first magnetization free layer and the second magnetization free layer.

11. The device according to claim 9 , wherein

the aspect ratio of the first magnetization free layer and the second magnetization free layer is 1 or higher.

12. The device according to claim 9 , wherein

a surface of the first magnetization free layer which faces the second magnetization free layer and a surface of the second magnetization free layer which faces the first magnetization free layer are rectangular which extend along the first write line.

13. The device according to claim 9 , wherein

the easy magnetization axis of the first magnetization free layer and an easy magnetization axis of the second magnetization free layer are substantially inclined 45 degree from the surface of the semiconductor substrate.

14. The device according to claim 9 , wherein

a magnetization direction of the magnetization fixed layer is along the easy magnetization axis of the first magnetization free layer and an easy magnetization axis of the second magnetization free layer.

15. The device according to claim 9 , wherein

the first write line and the second write line intersect each other and extend along the surface of the semiconductor substrate.

16. The device according to claim 9 , wherein an edge that connects an upper surface and side surface of the second magnetization free layer is cut off to form a beveled corner.

17. The device according to claim 9 further comprising:

a first write current circuit connected to the first write line; and

a second write current circuit connected to the second write line;

wherein, the first write current circuit supplies a first current to the first write line, the second write current circuit supplies a second current to the second write line with supply of the first current maintained, the supply of the first current is stopped with supply of the second current maintained, and the supply of the second current is stopped without the supply of the first current.