Magnetoresistive element and method of manufacturing the same
View Patent ↗A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
1. A magnetoresistive element comprising:
a stacked structure comprising a fixed layer comprising a fixed direction of magnetization, a recording layer comprising a varied direction of magnetization, and a nonmagnetic layer between the fixed layer and the recording layer;
a first protective film over a circumferential surface of the stacked structure, comprising silicon nitride; and
a second protective film over a circumferential surface of the first protective film, comprising silicon nitride,
wherein a hydrogen content in the first protective film is not more than 4 at %, and
a hydrogen content in the second protective film is not less than 6 at %.
2. The element of claim 1 , wherein
the first protective film is formed by Physical Vapor Deposition (PVD), and the second protective film is formed by Chemical Vapor Deposition (CVD).
3. The element of claim 1 , wherein the hydrogen content in the second protective film is not more than 20 at %.
4. The element of claim 1 , further comprising an interlayer dielectric film around the second protective film.
5. The element of claim 4 , wherein the interlayer dielectric film comprises silicon oxide.