Magnetoresistive element and method of manufacturing the same
View Patent ↗A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
1. A magnetoresistive element comprising:
a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed;
a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator; and
a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
2. The element according to claim 1 , wherein the second circumferential wall is further provided on a circumferential surface of the second nonmagnetic layer.
3. The element according to claim 2 , wherein the second circumferential wall is further provided on a circumferential surface of the first circumferential wall.
4. The element according to claim 1 , wherein an area of the free layer is smaller than that of the first fixed layer.
5. The element according to claim 1 , wherein an area of the second fixed layer is smaller than that of the free layer.
6. The element according to claim 1 , wherein an outer circumferential surface of the first circumferential wall is the same as that of the free layer.
7. The element according to claim 1 , wherein an outer circumferential surface of the second circumferential wall is the same as that of the first fixed layer.
8. The element according to claim 1 , wherein the circumferential surfaces of the first fixed layer, the free layer, and the second fixed layer are substantially perpendicular to film surfaces.
9. The element according to claim 1 , further comprising an upper electrode provided on the second fixed layer, and having the same planar shape as that of the second fixed layer.
10. The element according to claim 1 , further comprising a lower electrode provided below the first fixed layer, and having the same planar shape as that of the first fixed layer.
11. The element according to claim 1 , wherein the first nonmagnetic layer and the second nonmagnetic layer are made of one of a metal oxide and a paramagnetic metal.
12. The element according to claim 1 , wherein a planar shape of each of the first fixed layer, the second fixed layer, and the free layer is one of a circle and an ellipse.