Magnetic memory
View Patent ↗A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.
1. A magnetic memory comprising at least one element, the element comprising:
a multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a nonmagnetic layer located between the first magnetic layer and the second magnetic layer, the multilayer structure having a first surface, a second surface opposed to the first surface, and a side surface different from the first surface and the second surface;
a first electrode provided on the first surface of the multilayer structure and electrically connected to the first magnetic layer;
a second electrode provided on the second surface of the multilayer structure and electrically connected to the second magnetic layer;
an insulating film provided on the side surface of the multilayer structure;
a control electrode provided on the side surface of the multilayer structure with the insulating film located therebetween;
a voltage applying circuit that applies a voltage to the control electrode in a read operation; and
a readout circuit that flows a read current between the first electrode and the second electrode to read information from the element.
2. The memory according to claim 1 , further comprising:
a write circuit that flows a write current between the first electrode and the second electrode to write information to the element,
wherein when the write circuit writes the information to the element, the voltage applying circuit applies the voltage to the control electrode so that a potential of the control electrode is identical with a potential of the second magnetic layer, or an energy barrier for changing the magnetization of the second magnetic layer is reduced.
3. A magnetic memory comprising at least one element, the element comprising:
a multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a nonmagnetic layer located between the first magnetic layer and the second magnetic layer, the magnetization of the first and the second magnetic layers being perpendicular to a film plane, and the multilayer structure having a first surface, a second surface opposed to the first surface, and a side surface different from the first surface and the second surface;
a first electrode provided on the first surface of the multilayer structure and electrically connected to the first magnetic layer;
a second electrode provided on the second surface of the multilayer structure and electrically connected to the second magnetic layer;
an insulating film provided on the side surface of the multilayer structure; and
a control electrode provided on the side surface of the multilayer structure with the insulating film located therebetween.
4. The memory according to claim 1 , wherein the magnetization of the first and the second magnetic layers is parallel to a film plane.
5. A magnetic memory comprising at least one element, the element comprising:
a multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a nonmagnetic layer located between the first magnetic layer and the second magnetic layer, and the multilayer structure having a first surface, a second surface opposed to the first surface, and a side surface different from the first surface and the second surface;
a first electrode provided on the first surface of the multilayer structure and electrically connected to the first magnetic layer;
a second electrode provided on the second surface of the multilayer structure and electrically connected to the second magnetic layer;
an insulating film provided on the side surface of the multilayer structure; and
a control electrode provided on the side surface of the multilayer structure with the insulating film located therebetween, the control electrode surrounding the entire side surface of the second magnetic layer.
6. The memory according to claim 1 , wherein the control electrode is divided into a plurality of portions each provided on a part of the side surface of the second magnetic layer with the insulating film being located therebetween.
7. A magnetic memory comprising at least one element, the element comprising:
a multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a nonmagnetic layer located between the first magnetic layer and the second magnetic layer, and the multilayer structure having a first surface, a second surface opposed to the first surface, and a side surface different from the first surface and the second surface;
a first electrode provided on the first surface of the multilayer structure and electrically connected to the first magnetic layer;
a second electrode provided on the second surface of the multilayer structure and electrically connected to the second magnetic layer;
an insulating film provided on the side surface of the multilayer structure; and
a control electrode provided on the side surface of the multilayer structure with the insulating film located therebetween,
wherein the at least one element includes two or more elements arranged in a matrix form, in which the control electrodes of the elements on a common row are connected to each other.
8. A magnetic memory comprising:
an element including:
a multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a nonmagnetic layer located between the first magnetic layer and the second magnetic layer, and the multilayer structure having a first surface, a second surface opposed to the first surface, and a side surface different from the first surface and the second surface;
a first electrode provided on the first surface of the magnetic multilayer structure and electrically connected to the first magnetic layer;
a second electrode provided on the second surface of the multilayer structure and electrically connected to the second magnetic layer;
an insulating film provided on the side surface of the multilayer structure; and
a control electrode provided on the side surface of the multilayer structure with the insulating film being located therebetween, a voltage being applied to the control electrode in a read operation,
a selection transistor of which one of a source and a drain is connected to one of the first and the second electrodes of the element;
a first wiring line connecting to a gate of the selection transistor;
a second wiring line connecting to the other of the first and the second electrodes of the element;
a third wiring line connecting to the other of the source and the drain of the selection transistor; and
a fourth wiring line connecting to the control electrode.
9. The memory according to claim 8 , further comprising:
a voltage applying circuit that applies a voltage to the control electrode; and
a readout circuit that flows a read current between the first electrode and the second electrode to read information from the element.
10. The memory according to claim 9 , further comprising:
a write circuit that flows a write current between the first electrode and the second electrode to write information to the element,
wherein when the write circuit writes the information to the element, the voltage applying circuit applies the voltage to the control electrode so that a potential of the control electrode is identical to a potential of the second magnetic layer, or an energy barrier for changing magnetization of the second magnetic layer is reduced.
11. The memory according to claim 8 , wherein the magnetization of the first and the second magnetic layers is perpendicular to [Ethel] a film plane.
12. The memory according to claim 8 , wherein the magnetization of the first and the second magnetic layers is parallel to a film plane.
13. The memory according to claim 8 , wherein the control electrode is provided to surround the entire side surface of the second magnetic layer.
14. The memory according to claim 8 , wherein the control electrode is divided into a plurality of portions each located on a part of the side surface of the second magnetic layer with the insulating film being located therebetween.
15. The memory according to claim 8 , wherein the at least one element includes two or more elements arranged in a matrix form, in which the control electrodes of the elements on a common row are connected with each other.
16. The memory according to claim 1 ,
wherein the control electrode faces side surfaces of the first and the second magnetic layers.
17. The memory according to claim 16 , further comprising:
a write circuit that flows a write current between the first electrode and the second electrode to write information to the element,
wherein when the write circuit writes the information to the element, the voltage applying circuit applies the voltage to the control electrode so that a potential of the control electrode is identical with a potential of the second magnetic layer, or an energy barrier for changing magnetization of the second magnetic layer is reduced.
18. The memory according to claim 16 , wherein the magnetization of the first and the second magnetic layers is perpendicular to a film plane.
19. The memory according to claim 16 , wherein the magnetization of the first and the second magnetic layers is parallel to a film plane.
20. The memory according to claim 16 , wherein the control electrode surrounds the entire side surface of the second magnetic layer.
21. The memory according to claim 16 , wherein the control electrode is divided into a plurality of portions each located on a part of the side surface of the second magnetic layer with the insulating film located therebetween.
22. The memory according to claim 16 , wherein the at least one element includes two or more elements arranged in a matrix form, in which the control electrodes of the elements on a common row are connected with each other.