Semiconductor device with vertical MOSFET and method of manufacturing the same
View Patent ↗A semiconductor device includes a base region formed above a semiconductor substrate, a source region formed above the base region, a gate electrode filled inside a trench formed above the semiconductor substrate, an interlayer insulation film formed all over the semiconductor substrate, a first contact hole formed in the interlayer insulation film to expose the gate electrode, a second contact hole formed in the interlayer insulation film and the source region to expose the base region, and a conductive film formed above a trench where the first contact hole is formed.
1. A semiconductor device comprising:
a base region formed above a semiconductor substrate;
a source region formed above the base region;
a gate electrode formed inside a trench formed above the semiconductor substrate;
an interlayer insulation film formed over the source region and the gate electrode;
a conductive film between the interlayer insulation film and the gate electrode;
a first contact hole extending through the interlayer insulation film and the conductive film to expose the gate electrode;
a second contact hole extending through the interlayer insulation film and the source region to expose the base region.
2. The semiconductor device according to claim 1 , further comprising:
an insulation film formed between the conductive film and the gate electrode.
3. The semiconductor device according to claim 1 , wherein the conductive film is formed of a polysilicon film.
4. A method of manufacturing a semiconductor device, comprising:
forming a trench above a semiconductor substrate;
forming a gate electrode inside the trench;
forming a base region above the semiconductor substrate;
forming a source region above the base region;
forming a conductive film above the gate electrode;
forming an interlayer insulation film over the source region and the conductive film;
forming a first contact hole to the base region by etching the interlayer insulation film and the source region; and
forming a second contact hole to the gate electrode by etching the interlayer insulation film and the conductive film.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the conductive film is a polysilicon film used for a diode or a resistor to be formed above an element separating film.
6. The method of manufacturing a semiconductor device according to claim 4 , wherein etching of the source region and the conductive film is silicon etching.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the conductive film is a polysilicon film used for a diode or a resistor to be formed above an element separating film.