Method for manufacturing semiconductor device
View Patent ↗The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance element. The present invention is directed to the manufacturing method of a semiconductor device in which respective semiconductor layers which become a sub collector layer, a collector layer, a base layer, a wide gap emitter layer and an emitter layer are sequentially formed over one surface of a semiconductor substrate and, thereafter, respective semiconductor layers are processed to form the hetero junction bipolar transistor, the Schottky diode and the resistance element in a monolithic manner. An emitter electrode of the hetero junction bipolar transistor, a Schottky electrode of the Schottky diode and a resistance film of the resistance element are simultaneously formed using a same material (for example, WSiN). Accordingly, the man-hours can be reduced and the manufacturing cost of the semiconductor device can be reduced.
1. A method for manufacturing a semiconductor device having a bipolar transistor and a resistance element formed in a first region and a second region of a semiconductor substrate, respectively, comprising the steps of:
(a) forming an emitter layer of the bipolar transistor in the first region;
(b) forming a base layer of the bipolar transistor, under the emitter layer, in the first region;
(c) forming a collector layer of the bipolar transistor, under the base layer, in the first region;
(d) forming a base electrode, electrically connected with the base layer, on the base layer;
(e) forming a collector electrode, electrically connected with the collector layer, on the collector layer; and
(f) forming an emitter electrode, electrically connected with the collector layer, on the collector layer, and a resistance film for the resistance element in the second region;
(g) forming a collector wiring over the collector electrode, said collector wiring to be electrically connected with the collector electrode;
(h) forming a base wiring over the base electrode, said base wiring to be electrically connected with the base electrode;
(i) forming an emitter wiring over the emitter electrode, said emitter wiring to be electrically connected with the emitter electrode; and
(j) forming a first wiring and a second wiring over the resistance film, said first and second wirings to be electrically connected with the resistance film,
wherein, in the step (f), the emitter electrode and resistance film are formed using a same layer.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor substrate is made of a GaAs substrate.
3. A method for manufacturing a semiconductor device according to claim 2 , wherein the semiconductor substrate is made of a semi-insulating GaAs substrate.
4. A method for manufacturing a semiconductor device according to claim 1 , wherein the emitter electrode and resistance film are comprised of a WSiN film, respectively.
5. A method for manufacturing a semiconductor device according to claim 1 , wherein the collector layer and base layer are comprised of a GaAs film, respectively.
6. A method for manufacturing a semiconductor device according to claim 1 , wherein the emitter layer is comprised of an InGaP film and a GaAs film.
7. A method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device has a Schottky diode over the semiconductor substrate.
8. A method for manufacturing a semiconductor device according to claim 7 , wherein the Schottky diode is comprised of an ohmic electrode and a Schottky electrode;
the Schottky electrode is formed in the step (f); and
the Schottky electrode, emitter electrode and resistance film are formed using the same layer.
9. A method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device comprises a power amplifier.
10. A method for manufacturing a semiconductor device according to claim 1 , wherein the power amplifier is employed in mobile communication terminals.
11. A method for manufacturing a semiconductor device having a bipolar transistor and a Schottky diode in a first region and a second region of a semiconductor substrate, respectively, comprising the steps of:
(a) forming the bipolar transistor having a collector layer, a base layer and an emitter layer in the first region;
(b) forming a first semiconductor layer of the Schottky diode in the second region;
(c) forming an ohmic electrode of the Schottky diode electrically connected with the first semiconductor layer in the second region;
(d) forming an emitter electrode of the bipolar transistor electrically connected with the emitter layer, and a Schottky electrode of the Schottky diode over the first semiconductor layer in the second region;
(e) forming a collector wiring over the collector electrode, said collector wiring to be electrically connected with the collector electrode;
(f) forming a base wiring over the base electrode, said base wiring to be electrically connected with the base electrode; and
(g) forming an emitter wiring over the emitter electrode, said emitter wiring to be electrically connected with the emitter electrode;
(h) forming a first wiring over the ohmic electrode, said first wiring to be electrically connected with the ohmic electrode;
(i) forming a second wiring over the Schottky electrode, said second wiring to be electrically connected with the Schottky electrode;
wherein the Schottky electrode and the first semiconductor layer of the Schottky diode have a Schottky contact; and
wherein the emitter electrode and Schottky electrode are made of a same layer.
12. A method for manufacturing a semiconductor device according to claim 11 , wherein the bipolar transistor is a hetero-junction bipolar transistor.
13. A method for manufacturing a semiconductor device according to claim 11 , wherein in the step(c), a collector electrode is formed over the collector layer;
the collector electrode is electrically connected with the collector layer; and
the collector electrode and ohmic electrode are made of a same layer.
14. A method for manufacturing a semiconductor device according to claim 11 , wherein the collector layer of the bipolar transistor and the first semiconductor layer of the Schottky diode are made of a same layer.
15. A method for manufacturing a semiconductor device according to claim 11 , wherein a base electrode is formed over the base layer; and
the base electrode is electrically connected with the base layer.
16. A method for manufacturing a semiconductor device according to claim 11 , wherein the semiconductor substrate is made of a GaAs substrate.
17. A method for manufacturing a semiconductor device according to claim 16 , wherein the semiconductor substrate is made of a semi-insulating GaAs substrate.
18. A method for manufacturing a semiconductor device according to claim 11 , wherein the emitter electrode and Schottky electrode are comprised of a WSiN film, respectively.
19. A method for manufacturing a semiconductor device according to claim 11 , wherein the collector layer and base layer are comprised of a GaAs film, respectively.
20. A method for manufacturing a semiconductor device according to claim 11 , wherein the emitter layer is comprised of an InGaP film and a GaAs film.
21. A method for manufacturing a semiconductor device according to claim 1 , wherein the collector, base and emitter electrodes and the first and second wirings are formed using a same layer.
22. A method for manufacturing a semiconductor device according to claim 11 , wherein the collector, base and emitter electrodes and the first and second wirings are formed using a same layer.