Source for thermal physical vapor deposition of organic electroluminescent layers
The present invention disclosed the deposition source installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate, and comprising a vessel consisted of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating means for supplying heat to the deposition material received in the vessel, the heating means being capable of moving vertically; and a means for moving the heating means (or the bottom wall), the moving means (or the bottom wall) being operated in response to the signal of a sensing means on varied distances between the heating means and the surface of said deposition material. Thus, the heating means is moved downward (or the bottom wall) is moved upward by the moving means to maintain the distance between the heating means (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.
1 - 17 . (canceled)
18 . A deposition source installed in a chamber, to form deposition organic electroluminescent layers onto a substrate, by applying a vaporized deposition material generated therein to the substrate, and by transferring heat to a vapor deposition material received therein, heated by applied electric power, comprising; a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom plate, said vapor efflux aperture having a length which is longer than, or the same as, the width of said substrate to be coated with a deposition organic electroluminescent layers.
19 . The deposition source according to claim 18 , wherein said deposition source is capable of moving to the horizontal direction with respect to said substrate.
20 . The deposition source according to claim 18 , wherein said substrate is capable of moving to the horizontal direction with respect to said deposition source.
21 . The deposition source according to claim 18 , wherein said deposition source has the upper portion and the lower portion, said upper portion has a sectional surface area smaller than that said lower portion.
22 . The deposition source according to claim 18 , wherein said deposition source is made from a material having thermal capacity which is higher than said deposition material.
23 . The deposition source according to claim 22 , wherein said deposition source is made of oxide or nitride of aluminum (Al), zirconium (Zr), silicon (Si), or yttrium (Y), or composite material of at least two above.