CMOS image sensor and method for fabricating the same
View Patent ↗A CMOS image sensor and fabricating method thereof enhances a light-receiving capability of an image sensor by preventing poor light-refraction characteristics at the peripheral part of a microlens. The CMOS image sensor includes at least one microlens formed by anistropic etching to have a focusing centerline, a central lens portion, and a peripheral lens portion, wherein the focusing centerline passes through the central lens portion and wherein the peripheral lens portion surrounds the central lens portion. The central lens portion has a first convex curvature based on a first radius and the peripheral lens portion has second convex curvature based on a second radius, wherein the second radius is greater than the first radius.
1. A method of fabricating a CMOS image sensor, comprising:
forming at least one photodiode in a predetermined surface of a semiconductor substrate;
forming a color filter layer over the semiconductor substrate including the at least one photodiode, the color filter layer having at least one color filter arranged corresponding to the at least one photodiode;
forming a planarizing layer over the semiconductor substrate including the color filter layer;
forming, on the planarizing layer, a first insulating layer to have a microlens pattern according to an arrangement of the at least one color filter;
forming, on the planarizing layer, a second insulating layer to have a sidewall pattern disposed along lateral sides of the microlens pattern; and
forming at least one microlens by an anisotropic etching of the microlens pattern and the sidewall pattern to have a focusing centerline, a central lens portion, and a peripheral lens portion,
wherein the focusing centerline passes through the central lens portion and wherein the peripheral lens portion surrounds the central lens portion,
wherein the peripheral lens portion has a convex structure smaller than a convex structure of the central lens portion,
wherein the central lens portion has a first convex curvature and the peripheral lens portion has a second convex curvature,
wherein the first convex curvature has a first radius, the second convex curvature has a second radius, and the first radius is greater than the second radius.
2. The method of claim 1 , wherein the first insulating layer is formed of one of germanium oxide (GeO 2 ) and boron oxide (B 2 O 3 ).
3. The method of claim 1 , wherein the second insulating layer is formed of silicon dioxide (SiO 2 ).
4. The method of claim 1 , wherein the first insulating layer exhibits a first light transmissivity and wherein the second insulating layer exhibits a second light transmissivity.
5. The method of claim 4 , wherein the first light transmissivity is greater than the second light transmissivity.
6. The method of claim 1 , wherein the first insulating layer is formed to have a thickness of 3,000˜6,000 Å.
7. The method of claim 6 , wherein the microlens pattern is formed by photolithography using a photoresist pattern formed on the first insulating layer according to an arrangement of the at least one microlens.
8. The method of claim 1 , wherein the second insulating layer is formed over the semiconductor substrate including the microlens pattern to have a thickness of 2,000˜5,000 Å.
9. The method of claim 8 , wherein the sidewall pattern is formed by an etch-back process carried out on the second insulating layer.