Semiconductor element including a wet prevention film
View Patent ↗A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.
1. A semiconductor element comprising:
a columnar projection which serves as a bump and is formed on an electrode on a semiconductor substrate; and
a wet prevention film formed at least on a part of side surface of said columnar projection that is close to said electrode.
2. The semiconductor element as set forth in claim 1 , wherein said columnar projection is formed on said electrode through an interconnected film or an adhesive film.
3. The semiconductor element as set forth in claim 1 , wherein the upper surface of said columnar projection or the upper portion of side surface and upper surface of said columnar projection is coated by a solder film.
4. The semiconductor element as set forth in claim 3 , wherein said solder film is formed of material with no lead contained therein.
5. The semiconductor element as set forth in claim 3 , wherein said solder film is coated with thin gold film or gold alloy film.
6. The semiconductor element as set forth in claim 1 , wherein said wet prevention film is an oxide film or a nitride film.
7. The semiconductor element as claimed in claim 1 , wherein said wet prevention film is a film formed by oxidation of the surface of said columnar projection.
8. The semiconductor element as set forth in claim 1 , wherein said columnar projection is formed of copper or copper alloy.