Semiconductor device having sidewall portion with silicon nitride film formed above layer and separated from region above primary insulating film via oxide film, where the portion is formed on sidewall of gate electrode
View Patent ↗A semiconductor device includes (i) a semiconductor layer, (ii) a first insulating film formed in the semiconductor layer, (iii) a conductive film continuously formed on the semiconductor layer and the first insulation film in a line shape, (iv) a second insulating film formed between the conductive film and the semiconductor layer along the conductive film, (v) a sidewall portion which is formed on a sidewall of the conductive film along the conductive film and which includes an oxide film and a first nitride film that is formed above the semiconductor layer and separated from a region above the first insulating film through the oxide film, (vi) and impurity diffusion regions formed on a surface of the semiconductor layer on both sides of the sidewall portion.
1. A semiconductor device, comprising:
a semiconductor layer;
a first insulating film formed in said semiconductor layer;
an elongated conductive member continuously formed above said semiconductor layer and said first insulating film, said conductive member having a bottom side that is oriented toward said semiconductor layer, a top side that is oriented away from said semiconductor layer, and first and second sidewalls that extend between said top and bottom sides;
a second insulating film formed between said conductive member and said semiconductor layer along said conductive member;
a first sidewall portion formed on said first sidewall of said conductive member and along said conductive member, said first sidewall portion including an oxide film and a first nitride film that is formed above said semiconductor layer and being separated from a region above said first insulating film; and
impurity diffusion regions formed in said semiconductor layer adjacent said first and second sidewall portions,
wherein said oxide film is a first oxide film that is disposed under said first nitride film,
wherein said first sidewall portion further comprises a second oxide film formed on said first nitride film,
wherein said first oxide film and said second oxide film come in contact with each other at a boundary between said semiconductor layer and said first insulating layer,
wherein said first insulating film is thicker than said semiconductor layer, and
wherein said conductive member and said first and second oxide films are formed along a step portion at an edge of said first insulating film.
2. The semiconductor device according to claim 1 ,
wherein said first oxide film and said second oxide film extend continuously along said first sidewall portion of said conductive member, and simultaneously come in contact with each other along said first sidewall portion of said conductive member.
3. The semiconductor device according to claim 2 ,
wherein said first oxide film and said second oxide film are formed to be nearly L-shaped in a cross-section view; and
wherein said first nitride film is formed between crosswise-extended portions of said first oxide film and said second oxide film.
4. The semiconductor device according to claim 1 ,
wherein said first sidewall portion further comprises a second nitride film formed above said first insulating film.
5. The semiconductor device according to claim 1 , further comprising a second sidewall portion formed on said second sidewall of said conductive member, wherein said second sidewall portion comprises another oxide film and another first nitride film.
6. The semiconductor device according to claim 1 , wherein said conductive member is a word line of a nonvolatile memory, and wherein, in a channel region adjacent said impurity diffusion regions, said oxide film and said first nitride film are disposed below said top side of said conductive member.