Spin-injection magnetoresistance effect element
A spin-injection magnetoresistance effect element that can avoid use of a large writing current and allows use of a large reading current. The spin-injection magnetoresistance effect element includes layers that may exhibit a tunnel magnetoresistance effect and layers that may exhibit a giant magnetoresistance effect.
1. A spin-injection magnetoresistance effect element comprising:
(A) a magnetization reversal layer that has a first face and a second face opposite to the first face, and stores information;
(B) a first magnetization reference layer that is disposed near one end of the magnetization reversal layer in a manner of facing the first face of the magnetization reversal layer with intermediary of a first nonmagnetic film between the first magnetization reference layer and the magnetization reversal layer, the first magnetization reference layer being magnetized in a first direction;
(C) a second magnetization reference layer that is disposed near the other end of the magnetization reversal layer in a manner of facing the first face of the magnetization reversal layer and being separated from the first magnetization reference layer with intermediary of a second nonmagnetic film between the second magnetization reference layer and the magnetization reversal layer, the second magnetization reference layer being magnetized in a second direction that is the opposite direction of the first direction;
(D) a first electrode that is electrically coupled to the first magnetization reference layer;
(E) a second electrode that is electrically coupled to the second magnetization reference layer; and
(F) a third electrode that is disposed in a manner of facing the second face of the magnetization reversal layer with intermediary of an insulating film between the third electrode and the magnetization reversal layer.
2. The spin-injection magnetoresistance effect element according to claim 1 , wherein
injection of a spin-polarized current from the first or second electrode via the first or second magnetization reference layer, respectively, into the magnetization reversal layer sets a magnetization direction of the magnetization reversal layer to the first or second direction, to thereby write information to the magnetization reversal layer.
3. The spin-injection magnetoresistance effect element according to claim 2 , wherein
a logical value of information written to the magnetization reversal layer is controlled by a direction of a current flowing between the first and second electrodes.
4. The spin-injection magnetoresistance effect element according to claim 2 , wherein
a voltage is applied to the third electrode in writing of information to the magnetization reversal layer.
5. The spin-injection magnetoresistance effect element according to claim 4 , wherein
the magnetization reversal layer is grounded in writing of information to the magnetization reversal layer.
6. The spin-injection magnetoresistance effect element according to claim 1 , wherein
the first magnetization reference layer, the first nonmagnetic film and the magnetization reversal layer form a multi-layer structure having a tunnel magnetoresistance (TMR) effect.
7. The spin-injection magnetoresistance effect element according to claim 6 , wherein
the second magnetization reference layer, the second nonmagnetic film and the magnetization reversal layer form a multi-layer structure having a giant magnetoresistance (GMR) effect.
8. The spin-injection magnetoresistance effect element according to claim 1 , wherein
a first antiferromagnetic layer is formed between the first magnetization reference layer and the first electrode, and
a second antiferromagnetic layer is formed between the second magnetization reference layer and the second electrode.
9. The spin-injection magnetoresistance effect element according to claim 1 , wherein
either one of the first and second magnetization reference layers has a synthetic ferri-magnetic structure.
10. The spin-injection magnetoresistance effect element according to claim 1 , wherein
either one of the first and second magnetization reference layers has a magnetostatically coupled structure.
11. The spin-injection magnetoresistance effect element according to claim 1 , wherein
the first magnetization reference layer has a synthetic ferri-magnetic structure, and the second magnetization reference layer has a synthetic ferro-magnetic structure.