IP Library › Granted Patent US 7,575,834
Granted Patent B2
US 7,575,834 · App. 11/276,992 · Granted Aug 18, 2009

Phase shifter for laser annealing

Assignee: Advanced LCD Technologies Development Center Co., Ltd.
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Quick Facts
Patent No.
US 7,575,834
App. No.
11/276,992
Granted
Aug 18, 2009
Kind
B2
Abstract

An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.

Claims (19)

1. A phase shifter for laser annealing which irradiates the surface to be treated with a luminous flux having a regular intensity distribution during the laser annealing, the shifter comprising:

a first transparent layer having a first refractive index in a wavelength of laser light for use;

a second transparent layer disposed on the first transparent layer and having a second refractive index which is different from the first refractive index in the wavelength of the laser light for use;

a third transparent layer disposed on the second transparent layer and having the first refractive index in the wavelength of the laser light for use; and

a spacer which is disposed between the first transparent layer and the third transparent layer along peripheral edge portions of the first and third transparent layers and which blocks the second transparent layer from the outside so as to prevent particles from entering between the first transparent layer and the third layer,

wherein a two-dimensional pattern of fine stepped portions is formed in at least one of an interface between the first transparent layer and the second transparent layer and an interface between the second transparent layer and the third transparent layer, whereby a phase difference is made between the laser light passed through the stepped portion and the laser light passed through a portion other than the stepped portion,

and wherein a thickness of the second transparent layer is selected so as to prevent interference of the laser light while the laser light passes through the second transparent layer.

2. The phase shifter for laser annealing according to claim 1 , wherein the first and third transparent layers are made of quartz glass, and the second transparent layer is made of an inactive gas.

3. The phase shifter for laser annealing according to claim 1 , wherein the first and third transparent layers are made of quartz glass, and the second transparent layer is made of porous silica.

4. The phase shifter for laser annealing according to claim 3 , having a transmittance of 80% or more in the wavelength of the laser light for use.

5. The phase shifter for laser annealing according to claim 1 , wherein a thickness d of the second transparent layer is set to satisfy the conditions:

d≧λ 2 /Δλ,

wherein λ denotes the wavelength of the laser light, and Δλ denotes an oscillation spectrum width.

6. The phase shifter for laser annealing according to claim 1 , having a transmittance of 80% or more in the wavelength of the laser light for use.

7. A phase shifter for laser annealing which irradiates the surface to be treated with a luminous flux having a predetermined intensity distribution during the laser annealing, the shifter comprising:

a first transparent layer having a first refractive index in a wavelength of laser light for use; and

a second transparent layer disposed on the first transparent layer so as to prevent particles from depositing on the first transparent layer, and having a second refractive index which is different from the first refractive index in the wavelength of the laser light for use,

wherein a two-dimensional pattern of fine stepped portions is formed in an interface between the first transparent layer and the second transparent layer, whereby a phase difference is made between the laser light passed through the stepped portion and the laser light passed through a portion other than the stepped portion,

and wherein a thickness of the second transparent layer is selected so as to prevent interference of the laser light while the laser light passes through the second transparent layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2011
From: ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD.
To: SHARP KABUSHIKI KAISHA
Reel/Frame 026858/0705 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 14, 2006
From: JYUMONJI, MASAYUKI
To: ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD.
Reel/Frame 017791/0864 →
Priority Claims (1)
JP 2005-165476 · Jun 6, 2005 · national
Continuity (1)
Related Publication 20060275673A1 · Dec 7, 2006