Semiconductor device having improved contact hole structure and method for fabricating the same
View Patent ↗A contact hole fabrication method for semiconductor device includes forming a dielectric layer on a semiconductor substrate, forming an antireflective layer on the dielectric layer, forming an amine source layer on the antireflective layer, forming a photoresist layer on the amine source layer, forming a first hole pattern having a T profile and a footing profile by exposing and developing the photoresist layer, forming a second hole pattern in which the profiles are changed by reflowing the photoresist layer, and forming a contact hole by selectively removing the amine source layer, the antireflective layer, and the dielectric layer using the photoresist layer as a mask.
1. A semiconductor device comprising:
a) a semiconductor substrate having a dielectric layer;
b) an antireflective layer formed on the dielectric layer;
c) an amine source layer formed on the antireflective layer;
d) a photoresist layer on said amine source layer, wherein the photoresist layer comprises a first hole pattern having a T profile and a footing profile, the T profile comprising a shape protruding at a upper part of a sidewall of the hole pattern, and the footing profile comprising a shape protruding at a lower part of a sidewall of the hole pattern; and
e) a contact hole formed at the amine source layer, the antireflective layer, and the dielectric layer.
2. The semiconductor device of claim 1 , wherein the amine source layer comprises a silyl amine, a cyclic amine, ammonia, or an ammonium salt.
3. The semiconductor device of claim 2 , wherein the amine source layer comprises hexamethyldisilane and/or hexamethyldisilazane.
4. The semiconductor device of claim 2 , wherein the amine source layer comprises N-methylpyrrolidine, N-methylpyrroline, N-methylpyrrole, pyridine and/or morpholine.
5. The semiconductor device of claim 2 , wherein the amine source layer comprises an ammonium hydroxide.
6. The semiconductor device of claim 1 , wherein the contact hole has a width of 0.13 μm or less.
7. The semiconductor device of claim 1 , wherein the contact hole has a width less than a corresponding reticle design rule.
8. The semiconductor device of claim 1 , wherein the contact hole has a substantially vertical sidewall.
9. The semiconductor device of claim 1 , wherein the contact hole has a width less than a corresponding reticle design rule.