Semiconductor device, having a through electrode semiconductor module employing thereof and method for manufacturing semiconductor device having a through electrode
View Patent ↗The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes 103 extending through the silicon substrate 101 is provided. An insulating film 105 is buried within the through hole 103 . A plurality of columnar through plugs 107 are provided in the insulating film 105.
1. A semiconductor device, comprising:
a semiconductor substrate;
a through hole extending through said semiconductor substrate;
a plurality of columnar electrically conducting plugs in said through hole and extending through said semiconductor substrate; and
an insulating film between a side wall of said through hole and said plurality of columnar electrically conducting plugs and between said plurality of columnar electrically conducting plugs.
2. The semiconductor device according to claim 1 , wherein at least one of said plurality of electrically conducting plugs is buried in said insulating film with an entirety of a longitudinal periphery thereof being directly in contact with said insulating film.
3. The semiconductor device according to claim 1 , further comprising a capacitor element including the plurality of adjacent electrically conducting plugs and said insulating film that provides an isolation among said plurality of adjacent electrically conducting plugs.
4. The semiconductor device according to claim 1 , wherein a portion of said semiconductor substrate is remained to cover the entire side surface of at least one of said plurality of electrically conducting plugs.
5. The semiconductor device according to claim 4 , wherein said electrically conducting plug is formed by burying the electrically conducting film so as to contact with a hole provided in a remained portion of said semiconductor substrate.
6. The semiconductor device according to claim 5 , wherein a plurality of said electrically conducting plugs are provided in said remained portion of said semiconductor substrate, and
wherein said semiconductor device further comprises a capacitor element including the plurality of adjacent electrically conducting plugs and said portion of said semiconductor substrate that provides isolations among said plurality of adjacent electrically conducting plugs.
7. The semiconductor device according to claim 1 , wherein a plurality of said electrically conducting plugs having rectangular cross-sections in a horizontal surface of said semiconductor substrate are arranged in a mutually parallel pattern.
8. The semiconductor device according to claim 1 , wherein cross sectional geometries of a plurality of said electrically conducting plugs are the same.
9. The semiconductor device according to claim 8 , wherein a plurality of said electrically conducting plugs are arranged in a lattice pattern.
10. The semiconductor device according to claim 1 , wherein said semiconductor device comprises a plurality of said electrically conducting plugs having substantially different cross sectional geometries or cross sectional areas in the horizontal plane of said semiconductor substrate.
11. The semiconductor device according to claim 1 , wherein a plurality of said through holes are provided in a single piece of said semiconductor substrate, and wherein cross-sectional geometries of a plurality of said through holes in the horizontal plane of said semiconductor substrate are substantially same.
12. A semiconductor module, comprising a stacked structure of the semiconductor device according to claim 1 and other semiconductor device,
wherein a plurality of said electrically conducting plugs are connected to a conductive member of said other semiconductor device adjacent to said semiconductor device.
13. The semiconductor device according to claim 2 , wherein each of said plurality of electrically conducting plugs has an entirety of a longitudinal periphery thereof directly in contact with said insulating film.
14. The semiconductor device according to claim 1 , wherein each of said plurality of electrically conducting plugs is solid in cross section and made entirely of a same conducting material.
15. A semiconductor device, comprising:
a semiconductor substrate;
a first through hole extending through said semiconductor substrate;
an insulating film filling said first through hole; and
a plurality of second through holes that are separated from each other and that extend through said insulating film, wherein each of said second through holes is filled with an electrically conducting plug that extends through said insulating film.
16. The semiconductor device according to claim 15 , wherein each said electrically conducting plug has an entirety of a longitudinal periphery thereof directly in contact with said insulating film.
17. The semiconductor device according to claim 15 , comprising at least four of said second through holes arrayed in a matrix.
18. The semiconductor device according to claim 15 , wherein each of said plurality of electrically conducting plugs is solid in cross section and made entirely of a same conducting material.