IP Library Granted Patent US 7,414,232
Granted Patent B2
US 7,414,232 · App. 11/293,080 · Granted Aug 19, 2008

Image sensor and method for fabricating the same

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Quick Facts
Patent No.
US 7,414,232
App. No.
11/293,080
Granted
Aug 19, 2008
Kind
B2
Abstract

An image sensor having self-aligned microlenses and a method for fabricating the same. The image sensor includes a photodiode formed in a predetermined surface of a silicon substrate, a planarization layer formed above the silicon substrate, the planarization layer having a recess in correspondence to the photodiode, and a color filter layer having a plurality of color filters formed on the planarization layer by a photolithographic process, each color filter having a convex structure. An area of a focusing lens can be maximized, and a phase signal of unfocused light is absorbed to prevent its photo-electrical conversion, thereby obtaining excellent photosensitivity.

Claims (16)

1. An image sensor, comprising:

a photodiode formed in a predetermined surface of a silicon substrate;

a planarization layer formed above the silicon substrate, said planarization layer having a recess corresponding to the photodiode;

a color filter layer having a plurality of color filters formed directly on said planarization layer by a photolithographic process, each color filter having a convex structure; and

a plurality of microlenses formed on said color filter layer corresponding to the plurality of color filters,

wherein said plurality of microlenses is formed by means of spin coating a photoresist for the microlenses in a state which step differentials are generated by means of the convex structure after depositing the photoresist on said color filter layer.

2. The image sensor according to claim 1 , wherein said planarization layer is formed of spin-on-glass.

3. A method for fabricating an image sensor, the method comprising:

forming a photodiode in a predetermined surface of a silicon substrate;

forming a planarization layer above the silicon substrate, the planarization layer having a recess corresponding to the photodiode;

forming a color filter layer having a plurality of color filters formed directly on the planarization layer by a photolithographic process, each color filter having a convex structure; and

forming a plurality of microlenses on the color filter layer corresponding to the plurality of color filters,

wherein the step of forming the microlenses comprises:

depositing a photoresist for the microlenses on the color filter layer;

forming the microlenses by spin coating the photoresist in a state which step differentials are generated by means of the convex structure.

4. The method according to claim 3 , wherein the planarization layer is formed of spin-on-glass.

Assignments (2)
CHANGE OF NAME Recorded Jun 15, 2006
From: DONGBUANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 018176/0351 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2005
From: KIM, SANG SIK
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 017324/0934 →