IP Library › Granted Patent US 7,667,389
Granted Patent B2
US 7,667,389 · App. 11/294,590 · Granted Feb 23, 2010

Light emitting element, light emitting device, and electronic device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,667,389
App. No.
11/294,590
Granted
Feb 23, 2010
Kind
B2
Abstract

A light-emitting element is demonstrated which has a mixed layer between a pair of electrodes. The mixed layer comprises a first region and a second region each of which comprises both a metal oxide and a compound that exhibits an electron donating property to the metal oxide. The light-emitting element is characterized in that the first region and the second region are provided alternately and repeatedly in a thickness direction of the mixed layer and have a thickness of 0.1 nm to 10 nm, and that a concentration of the metal oxide in the first region is different from that in the second region.

Claims (73)

1. A light-emitting device comprising:

a mixed layer formed between a pair of electrodes and in contact with one of the pair of electrodes,

wherein the mixed layer comprises plural first regions and plural second regions,

wherein each of the first regions and each of the second regions include a metal oxide and a compound that exhibits an electron donating property to the metal oxide,

wherein the first regions and the second regions are provided alternately in a thickness direction of the mixed layer, and

wherein a concentration of the metal oxide in the first regions is higher than a concentration of the metal oxide in the second regions.

2. The light-emitting device according to claim 1 ,

wherein the compound is an aromatic amine compound.

3. The light-emitting device according to claim 1 ,

wherein the metal oxide includes a metal atom belonging to any one of Groups 4 to 8 of the periodic table of the elements.

4. The light-emitting device according to claim 3 ,

wherein the metal atom is selected from a group consisting of vanadium, molybdenum, rhenium, and ruthenium.

5. The light-emitting device according to claim 1 ,

wherein the light-emitting device is incorporated into an electronic device selected from the group consisting of a personal computer, a phone, and a television.

6. The light-emitting device according to claim 1 ,

wherein at least one of the first regions is sandwiched between two of the second regions and is in contact with the two of the second regions.

7. The light-emitting device according to claim 1 ,

wherein each of the first regions and each of the second regions have a thickness equal to or larger than 0.1 nm and equal to or smaller than 10 nm.

8. A light-emitting device comprising:

a mixed layer formed between a pair of electrodes and in contact with one of the pair of electrodes,

wherein the mixed layer comprises plural first regions and plural second regions,

wherein each of the first regions and each of the second regions include a metal oxide and a compound that exhibits an electron donating property to the metal oxide,

wherein the first regions and the second regions are provided alternately in a thickness direction of the mixed layer,

wherein a concentration of the metal oxide in the first regions is higher than a concentration of the metal oxide in the second regions,

wherein a molar ratio of the metal oxide to the compound is equal to or larger than 0.1 and equal to or smaller than 10 in the first regions and the second regions.

9. The light-emitting device according to claim 8 ,

wherein the compound is an aromatic amine compound.

10. The light-emitting device according to claim 8 ,

wherein the metal oxide includes a metal atom belonging to any one of Groups 4 to 8 of the periodic table of the elements.

11. The light-emitting device according to claim 10 ,

wherein the metal atom is selected from a group consisting of vanadium, molybdenum, rhenium, and ruthenium.

12. The light-emitting device according to claim 8 ,

wherein the light-emitting device is incorporated into an electronic device selected from the group consisting of a personal computer, a phone, and a television.

13. The light-emitting device according to claim 8 ,

wherein at least one of the first regions is sandwiched between two of the second regions and is in contact with the two of the second regions.

14. The light-emitting device according to claim 8 ,

wherein each of the first regions and each of the second regions have a thickness equal to or larger than 0.1 nm and equal to or smaller than 10 nm.

15. A light-emitting device comprising:

a mixed layer formed between a pair of electrodes and in contact with one of the pair of electrodes,

wherein the mixed layer comprises plural first regions and plural second regions,

wherein each of the first regions and each of the second regions include a metal oxide, a first compound that exhibits an electron donating property to the metal oxide, and a second compound that has a lower LUMO level and a higher HOMO level than the first compound,

wherein the first regions and the second regions are provided alternately in a thickness direction of the mixed layer, and

wherein a concentration of the metal oxide in the first regions is higher a concentration of than the metal oxide in the second regions.

16. The light-emitting device according to claim 15 ,

wherein the compound is an aromatic amine compound.

17. The light-emitting device according to claim 15 ,

wherein the metal oxide includes a metal atom belonging to any one of Groups 4 to 8 of the periodic table of the elements.

18. The light-emitting device according to claim 17 ,

wherein the metal atom is selected from a group consisting of vanadium, molybdenum, rhenium, and ruthenium.

19. The light-emitting device according to claim 15 ,

wherein the light-emitting device is incorporated into an electronic device selected from the group consisting of a personal computer, a phone, and a television.

20. The light-emitting device according to claim 15 ,

wherein at least one of the first regions is sandwiched between two of the second regions and is in contact with the two of the second regions.

21. The light-emitting device according to claim 15 ,

wherein each of the first regions and each of the second regions have a thickness equal to or larger than 0.1 nm and equal to or smaller than 10 nm.

22. A light-emitting device comprising:

a mixed layer formed between a pair of electrodes and in contact with one of the pair of electrodes,

wherein the mixed layer comprises plural first regions and plural second regions,

wherein each of the first regions and each of the second regions include a metal oxide, a first compound that exhibits an electron donating property to the metal oxide, and a second compound that has a lower LUMO level and a higher HOMO level than the first compound,

wherein the first regions and the second regions are provided alternately in a thickness direction of the mixed layer,

wherein a concentration of the metal oxide in the first regions is higher than a concentration of the metal oxide in the second regions, and

wherein a molar ratio of the metal oxide to the first compound is equal to or larger than 0.1 and equal to or smaller than 10 in the first regions and the second regions.

23. The light-emitting device according to claim 22 ,

wherein the compound is an aromatic amine compound.

24. The light-emitting device according to claim 22 , wherein the metal oxide includes a metal atom belonging to any one of Groups 4 to 8 of the periodic table of the elements.

25. The light-emitting device according to claim 24 ,

wherein the metal atom is selected from a group consisting of vanadium, molybdenum, rhenium, and ruthenium.

26. The light-emitting device according to claim 22 ,

wherein the light-emitting device is incorporated into an electronic device selected from the group consisting of a personal computer, a phone, and a television.

27. The light-emitting device according to claim 22 ,

wherein at least one of the first regions is sandwiched between two of the second regions and is in contact with the two of the second regions.

28. The light-emitting device according to claim 22 ,

wherein each of the first regions and each of the second regions have a thickness equal to or larger than 0.1 nm and equal to or smaller than 10 nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2005
From: IKEDA, HISAO; SAKATA, JUNICHIRO; IWAKI, YUJI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 017305/0081 →
Priority Claims (1)
JP 2004-353448 · Dec 6, 2004 · national
Continuity (1)
Related Publication 20060119262A1 · Jun 8, 2006