Metal wiring for semiconductor device and method for forming the same

1. A metal wiring for a semiconductor device, comprising:

a first insulating layer and a second insulating layer;

an interlayer insulating film formed between the first and second insulating layers, wherein the interlayer insulating film is provided with holes having a designated shape;

a barrier metal layer, a copper seed layer, and a copper layer sequentially formed in the holes of the interlayer insulating film; and

a capping layer formed between the interlayer insulating film and the second insulating layer, wherein the capping layer is made of a negatively charged insulating material.

2. The metal wiring of claim 1 , wherein the holes include trenches.

3. The metal wiring of claim 1 , wherein the holes include via holes and trenches.

4. The metal wiring of claim 1 , wherein the capping layer is one of a negatively charged oxide film and a negatively charged nitride film.

5. A method for forming a metal wiring for a semiconductor device, comprising:

sequentially forming a first interlayer insulating film and a second interlayer insulating film on a first insulating layer;

forming a first photosensitive film on the second interlayer insulating film;

patterning the first photosensitive film so that via hole portions of the first photosensitive film are removed;

etching the second interlayer insulating film using the first photosensitive film as a mask;

removing the first photosensitive film by ash treatment;

forming a second photosensitive film on the second interlayer insulating film;

patterning the second photosensitive film so that trench portions of the second photosensitive film are removed;

etching the second and first interlayer insulating films using the second photosensitive film as a mask;

removing the second photosensitive film by ash treatment;

sequentially forming a barrier metal layer, a copper seed layer, and a copper layer on overall surfaces of the first and second interlayer insulating films having via holes and trenches;

removing the barrier metal layer, the copper seed layer, and the copper layer from an upper surface of the second interlayer insulating film;

forming a capping layer made of a negatively charged insulating material on the overall surface of the first insulating layer including the second interlayer insulating film; and

forming a second insulating layer on the capping layer.

6. The method of claim 5 , wherein forming a capping layer made of the negatively charged insulating material comprises forming an insulating material layer and negatively charging the insulating material layer.

7. The method of claim 5 , wherein forming a capping layer made of the negatively charged insulating material comprises producing the negatively charged insulating material and applying the negatively charged insulating material to the overall surface of the first insulating layer including the interlayer insulating film.

8. A method for forming a metal wiring for a semiconductor device, comprising:

forming an interlayer insulating film on a first insulating layer;

forming a photosensitive film on the interlayer insulating film;

patterning the photosensitive film so that trench portions of the photosensitive film are removed;

etching the interlayer insulating film using the photosensitive film as a mask to form trenches;

removing the photosensitive film by ash treatment;

sequentially forming a barrier metal layer, a copper seed layer, and a copper layer on overall surfaces of the interlayer insulating film having the trenches;

removing the barrier metal layer, the copper seed layer, and the copper layer from an upper surface of the interlayer insulating film;

forming a capping layer made of a negatively charged insulating material on the overall surface of the first insulating layer including the interlayer insulating film; and

forming a second insulating layer on the capping layer.

9. The method of claim 8 , wherein forming a capping layer made of the negatively charged insulating material comprises forming an insulating material layer and negatively charging the insulating material layer.

10. The method of claim 8 , wherein forming a capping layer made of the negatively charged insulating material comprises producing the negatively charged insulating material and applying the negatively charged insulating material to the overall surface of the first insulating layer including the interlayer insulating film.