Granted Patent B2

US 7,279,113 · App. 11/298,244 · Granted Oct 9, 2007

Abstract

Claims (20)

1. A method of forming a lithography template, said method comprising:

positioning an elastomer layer on a body;

positioning an imprinting layer on said elastomer layer such that said elastomer layer is positioned between said body and said imprinting layer;

positioning a masking layer on said imprinting layer such that said imprinting layer is positioned between said masking layer and said elastomer layer, with a portion of a layer adjacent said masking layer being exposed through said masking layer;

etching said portion of said imprinting layer such that a pattern is formed in said imprinting layer;

removing said masking layer; and

with said elastomer layer being configured to alter a portion of said pattern.

2. The method as recited in claim 1 , wherein said imprinting layer comprises an imprinting area, wherein said pattern is positioned entirely within said imprinting area, and wherein an entirety of said imprinting area transmits actinic radiation.

3. The method as recited in claim 1 , wherein said elastomer transmits actinic radiation.

4. The method as recited in claim 1 , wherein said body transmits actinic radiation.

5. The method as recited in claim 1 , wherein said imprinting layer is adapted to be conformal with a wafer surface.

6. The method as recited in claim 1 further comprising positioning an additional masking layer on said etched imprinting layer such that a rectangular imprinting area circumscribing said pattern is masked; and etching a periphery of said pattern such that an entirety of an etched surface of said periphery is a spaced distance from a surface of said imprinting area.

7. The method as recited in claim 6 , wherein etching said periphery comprises etching into said body.

8. The method as recited in claim 7 , further comprising:

positioning a sacrificial layer on said imprinting layer such that said imprinting layer is positioned between said elastomer layer and said sacrificial layer, and such that said sacrificial layer is positioned between said masking layer and said imprinting layer; and

etching said portion of said sacrificial layer such that a portion of said imprinting layer is exposed through said masking layer, wherein etching said sacrificial layer proceeds etching said imprinting layer and wherein removing said masking layer further comprises removing said sacrificial layer.

9. The method as recited in claim 8 , wherein said sacrificial layer is conductive.

10. The method as recited in claim 1 wherein a plurality of portions of said layer are exposed and with etching further including etching said plurality of portions of said imprinting layer.

11. The method as recited in claim 1 with said elastomer layer further being configured to alter a portion of said pattern in a first direction while minimizing dimensional variability in a second direction orthogonal to said first direction.

12. The method as recited in claim 1 with said elastomer layer further being configured to alter a portion of said pattern in response to a force while having suitable memory to return to an initial state in an absence of said force.

Assignments (10)