Diode having vertical structure and method of manufacturing the same
View Patent ↗A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
1. A method of making a diode, comprising:
forming a first n-GaN layer on a substrate;
forming an active layer on the first n-GaN layer;
forming a p-GaN layer on the active layer;
separating the substrate from the first n-GaN layer;
forming an n-type contact layer on the n-GaN layer;
forming a p-electrode on the p-GaN layer,
wherein the n-type contact layer acts as a reflective layer to reflect light from the active layer.
2. The method according to claim 1 , wherein the p-electrode is formed prior to separating the substrate.
3. The method according to claim 1 , further comprising forming a second n-GaN layer between the substrate and the first n-GaN layer.
4. The method according to claim 3 , wherein the second n-GaN is formed using MOCVD.
5. The method according to claim 1 , wherein the substrate includes sapphire.
6. The method according to claim 1 , wherein the substrate is separated from the first n-GaN using a laser.
7. The method according to claim 1 , further comprising forming a transparent conductive layer between the p-electrode and the p-GaN layer.
8. A method of forming a diode, comprising:
forming an second GaN layer on a substrate having a first Gan layer;
forming an active layer on the second GaN layer;
forming a third GaN layer on the active layer;
separating the substrate from the first GaN layer; and
forming a first electrode on the first GaN layer where the substrate was separated;
wherein the first electrode is a reflective layer to reflect light from the active layer.
9. The method according to claim 8 , wherein the second GaN layer is formed on the first GaN layer using MOCVD.
10. The method according to claim 8 , wherein the second GaN layer is epitaxially grown on the substrate.
11. The method according to claim 8 , wherein the substrate is separated using laser.
12. The method according to claim 8 , wherein the active layer includes a multiple quantum well.
13. The method according to claim 8 , wherein the substrate includes sapphire.
14. The method according to claim 8 , wherein the first electrode includes aluminum.