Diode design to reduce the effects of radiation damage
View Patent ↗A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.
1. A photodetector formed of an array of pixels on a substrate and covered by a scintillator, each pixel comprising:
a photodiode configured to receive photons and to deplete a stored charge in response to the received photons; and
a gate layer surrounding at least a portion of an edge of the photodiode, the gate layer limiting charge leakage between contacts of the photodiode.
2. The photodetector of claim 1 , wherein at each pixel the gate layer is electrically coupled to a contact of the photodiode and maintained at a common voltage with the contact.
3. The photodetector of claim 1 , wherein at each pixel the diode is formed in an underlying contact layer, and the gate layer is separated from the underlying contact layer by a passivation layer.
4. The photodetector of claim 1 , wherein at each pixel the gate layer is a contact of the photodiode.
5. The photodetector of claim 1 , wherein at each pixel the photodiode includes an upper contact layer, and the gate layer is coupled to the upper contact layer by a via.
6. The photodetector of claim 1 , wherein at each pixel the gate layer is maintained at a voltage different from a voltage level of two contacts of the photodiode.
7. The photodetector of claim 1 , wherein each photodiode has a substantially round periphery.
8. The photodetector of claim 1 , wherein each photodiode occupies a surface area of from approximately 20% to approximately 60% of a total surface area of the respective pixel.
9. A photodetector formed of an array of pixels on a substrate and covered by a scintillator, each pixel comprising:
a photodiode configured to receive photons and to deplete a stored charge in response to the received photons;
a lower contact layer underlying the photodiode and in contact with a lower surface thereof;
an upper contact layer in contact with an upper surface of the photodiode;
a gate layer surrounding at least a portion of an edge of the photodiode, the gate layer limiting charge leakage between the upper and lower contact layers; and
a passivation layer separating the gate layer and the lower contact layer.
10. The photodetector of claim 9 , wherein at each pixel the gate layer is separated from the upper contact layer by an additional passivation layer.
11. The photodetector of claim 9 , wherein at each pixel the gate layer is electrically coupled to the upper contact layer by a via.
12. The photodetector of claim 9 , wherein at each pixel the gate layer is maintained at a voltage different from a voltage level of the upper and lower contact layers.
13. The photodetector of claim 9 , wherein each photodiode has a substantially round periphery.
14. The photodetector of claim 9 , wherein each photodiode occupies a surface area of from approximately 20% to approximately 60% of a total surface area of the respective pixel.
15. A photodetector formed of an array of pixels on a substrate and covered by a scintillator, each pixel comprising:
a substantially round photodiode configured to receive photons and to deplete a stored charge in response to the received photons, the photodiode occupying a surface area of from approximately 20% to approximately 60% of a total surface area of the respective pixel;
a lower contact layer underlying the photodiode and in contact with a lower surface thereof;
an upper contact layer in contact with an upper surface of the photodiode;
a gate layer surrounding at least a portion of an edge of the photodiode, the gate layer limiting charge leakage between the upper and lower contact layers; and
a passivation layer separating the gate layer and the lower contact layer.
16. The photodetector of claim 15 , wherein at each pixel the gate layer is separated from the upper contact layer by an additional passivation layer.
17. The photodetector of claim 15 , wherein at each pixel the gate layer is electrically coupled to the upper contact layer by a via.
18. The photodetector of claim 15 , wherein at each pixel the gate layer is maintained at a voltage different from a voltage level of the upper and lower contact layers.
19. The photodiode of claim 15 , wherein the upper contact layer and the photodiode occupy a combined surface area greater than approximately 60% of a total surface area of each pixel.
20. The photodiode of claim 15 , wherein the upper contact layer and the gate layer form, with the lower contact layer, a capacitor for storing charge depleted by receipt of photons by the photodiode.