Semiconductor cleaning solution
View Patent ↗The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a′), wherein q is equal to 1, 2 or 3; wherein R 1 , R 2 and R 3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.
1. A composition comprising a first compound and a second compound, said first compound having the chemical formula
wherein m, n and o are independently from each other equal to 2 or 3,
wherein p is equal to 1 or 2,
wherein R is a chemical group with the formula:
wherein q is equal to 1, 2 or 3,
wherein R 1 , R 2 and R 3 are independently selected from the group consisting of hydrogen and an organic group,
wherein said second compound is capable of complexing at least one metal selected from the group consisting of aluminum, iron, and copper and wherein the second compound has the chemical formula
2. The composition of claim 1 , wherein said composition is an aqueous composition.
3. The composition of claim 1 , further comprising an oxidizing compound.
4. The composition of claim 3 , wherein said oxidizing compound is hydrogen peroxide.
5. The composition of claim 3 , wherein an amount of said oxidizing compound is from about 0.0001 weight % to about 30 weight %.
6. The composition of claim 3 , wherein an amount of said oxidizing compound is from about 0.01 weight % to about 10 weight %.
7. The composition of claim 1 , further comprising an alkaline compound.
8. The composition of claim 7 , wherein an amount of said alkaline compound is from about 0.0001 weight % to about 30 weight %.
9. The composition of claim 7 , wherein an amount of said alkaline compound is from about 0.01 weight % to about 10 weight %.
10. The composition of claim 7 , wherein said alkaline compound comprises an inorganic basic compound or an organic basic compound.
11. The composition of claim 7 , wherein said alkaline compound is selected from the group consisting of ammonia and an organic amine.
12. The composition of claim 11 , wherein said organic amine is selected from the group consisting of choline(hydroxyltrialkylammoniumhydroxide), alkanolamine, tetraalkylammoniumhydroxide, and guanidine compounds.
13. The composition of claim 1 , further comprising an oxidizing compound and an alkaline compound.
14. The composition of claim 1 , wherein said organic group is selected from the group consisting of an aliphatic side chain, a heterocyclic side chain and an aromatic side chain.
15. The composition of claim 1 , wherein R 2 and R 3 are hydrogen and R 1 is an aliphatic side chain.
16. The composition of claim 1 , wherein said first compound has the chemical formula
17. The composition of claim 1 , wherein m, n, and o are each equal to two.
18. The composition of claim 1 , further comprising ammonium hydroxide, hydrogen peroxide, and water.
19. The composition of claim 1 , wherein an amount of said first compound is from about 0.001 weight % to about 10 weight %.
20. The composition of claim 1 , wherein an amount of said first compound is from about 0.01 weight % to about 1 weight %.
21. The composition of claim 1 , wherein an amount of said second compound is from about 0.001 weight % to about 10 weight %.
22. The composition of claim 1 , wherein an amount of said second compound is from about 1 weight % to about 10 weight %.