Selective stress relaxation of contact etch stop layer through layout design

1. A method of fabrication of a semiconductor device comprising:

providing a substrate having a PMOS region and a NMOS region;

providing a PMOS transistor in the PMOS region and a NMOS transistor in the NMOS region, wherein

the PMOS transistor comprises a PMOS gate, PMOS gate dielectric, PMOS channel and PMOS S/D regions, and

the NMOS transistor comprises a NMOS gate, NMOS gate dielectric, NMOS channel, and NMOS S/D regions;

forming a stress layer having a first stress over the substrate, the stress layer covering the PMOS region and the NMOS region;

forming a dielectric layer over the stress layer;

forming PMOS S/D contact holes having a PMOS S/D contact layout design through the stress layer in the PMOS region to expose portions of the PMOS S/D regions and NMOS S/D contact holes having a NMOS S/D contact layout design through the stress layer in the NMOS region to expose portions of the NMOS S/D regions, wherein

the PMOS S/D contact hole layout design is based on PMOS stress considerations and has a PMOS S/D contact hole area, the PMOS S/D contact layout design comprises adapting size, shape, number or location or a combination thereof of the PMOS S/D contact holes to cause the stress layer with the first stress to induce a first desired stress on the PMOS channel based on the PMOS stress considerations,

the NMOS S/D contact hole layout design is based on NMOS stress considerations and has a NMOS S/D contact hole area, and the NMOS S/D contact layout design comprises adapting size, shape, number or location or a combination thereof of the NMOS S/D contact holes to cause the stress layer with the first stress to induce a second desired stress on the NMOS channel based on the NMOS stress considerations,

wherein the PMOS S/D contact hole area is larger than the NMOS S/D contact hole area or the PMOS S/D contact holes are closer to the PMOS gate than the NMOS S/D contact holes are to the NMOS gate or a combination thereof, and

the first desired stress is different from the second desired stress; and

forming contact plugs in the PMOS contact holes and the NMOS contact holes.

2. The method of claim 1 wherein:

the stress layer is a tensile stress layer and the first desired stress comprises a tensile stress; and

the PMOS S/D contact hole area is larger than the NMOS S/D contact hole area, wherein the first desired stress is less tensile than the second desired stress.

3. The method of claim 1 wherein:

the stress layer is a tensile stress layer and the first desired stress comprises a tensile stress; and

the PMOS S/D contact holes are closer to the PMOS gate than the NMOS S/D contact holes are to the NMOS gate, wherein the first desired stress is less tensile than the second desired stress.

4. The method of claim 1 wherein:

the stress layer is a tensile stress layer and the first desired stress comprises a tensile stress;

the PMOS S/D contact hole area is larger than the NMOS S/D contact hole area;

the PMOS S/D contact holes are closer to the PMOS gate than the NMOS S/D contact holes are to the NMOS gate; and

wherein the first desired stress is less tensile than the second desired stress.

5. The method of claim 1 wherein:

the stress layer is a compressive stress layer and puts the first desired stress comprising a compressive stress on the PMOS channel; and

the NMOS S/D contact area is larger than the PMOS S/D contact area wherein the second desired stress is less compressive than the first desired stress.

6. The method of claim 1 wherein:

the stress layer is a compressive stress layer and puts the first desired stress comprising a compressive stress on the PMOS channel; and

the NMOS S/D contact holes are closer, on average, to the NMOS gate than the PMOS S/D contact holes are to the PMOS gate, wherein the second desired stress is less compressive than the first desired stress.

7. The method of claim 1 wherein:

the stress layer is a compressive stress layer and puts the first desired stress comprising a compressive stress on the PMOS channel;

the NMOS S/D contact holes are closer, on average, to the NMOS gate than the PMOS S/D contact hole are to the PMOS gate;

the NMOS S/D contact area is larger than the PMOS contact hole S/D area; and wherein the second desired stress is less compressive than the first desired stress.

8. A semiconductor device comprising:

a substrate having a PMOS region and a NMOS region;

a PMOS transistor in the PMOS region and a NMOS transistor in the NMOS region,

wherein the PMOS transistor is comprised of a PMOS gate, PMOS gate dielectric, PMOS channel and PMOS S/D regions, and

the NMOS transistor is comprised of a NMOS gate, NMOS gate dielectric, NMOS channel, and NMOS S/D regions;

a stress layer having a first stress disposed over the substrate over the PMOS region and the NMOS region;

a dielectric layer disposed over the stress layer;

PMOS S/D contact holes having a PMOS S/D contact layout design through the stress layer in said PMOS region to expose portions of the PMOS S/D regions and NMOS S/D contact holes having a NMOS S/D contact layout design through the stress layer in the NMOS region to expose portions of the NMOS S/D regions,

wherein,

the PMOS S/D contact hole design is based on PMOS stress considerations and has a PMOS S/D contact hole area, the PMOS S/D contact layout design comprises adapting size, shape, number or location or a combination thereof of the PMOS S/D contact holes to cause the stress layer with the first stress to induce a first desired stress on the PMOS channel based on the PMOS stress considerations,

the NMOS S/D contact hole design is based on NMOS stress considerations and has a NMOS S/D contact hole area, the NMOS S/D contact layout design comprises adapting size, shape, number or location or a combination thereof of the NMOS S/D contact holes to cause the stress layer with the first stress to induce a second desired stress on the NMOS channel based on the NMOS stress considerations,

wherein the PMOS S/D contact hole area is larger than the NMOS S/D contact hole area or the PMOS S/D contact holes are closer to the PMOS gate than the NMOS S/D contact holes are to the NMOS gate or a combination thereof, and

the first desired stress is different from the second desired stress; and

contact plugs in the PMOS contact holes and the NMOS contact holes.

9. The device of claim 8 wherein:

the stress layer is a tensile stress layer that induces the first desired stress comprising a tensile stress; and

the PMOS S/D contact hole area is larger than the NMOS S/D contact hole area, wherein the first desired stress is less tensile than the second desired stress.

10. The device of claim 8 wherein:

the stress layer is a tensile stress layer that induces the first desired stress comprising a tensile stress; and

the PMOS S/D contact holes are closer to the PMOS gate than the NMOS S/D contact holes are to the NMOS gate, wherein the first desired stress is less tensile than the second desired stress.

11. The device of claim 8 wherein:

the stress layer is a tensile stress layer that induces the first desired stress comprising a tensile stress; and

the PMOS S/D contact hole area is larger than the NMOS S/D contact hole area and the PMOS S/D contact holes are closer to the PMOS gate than the NMOS S/D contact holes are to the NMOS gate, wherein the first desired stress is less tensile than the second desired stress.

12. The device of claim 8 wherein:

the stress layer is a compressive stress layer and puts the first desired stress comprising a compressive stress on the PMOS channel; and

the NMOS S/D contact area is larger than the PMOS S/D contact area, wherein the second desired stress is less compressive than the first desired stress.

13. The device of claim 8 wherein:

the stress layer is a compressive stress layer and puts the first desired stress comprising a compressive stress on the PMOS channel; and

the NMOS S/D contact holes are closer, on average, to the NMOS gate than the PMOS S/D contact holes are to the PMOS gate, wherein the second desired stress is less compressive than the first desired stress.

14. The device of claim 8 wherein:

the stress layer is a compressive stress layer, wherein the stress layer puts a compressive stress on the PMOS channel;

the NMOS S/D contact holes are closer, on average, to the NMOS gate than the PMOS S/D contact hole are to the PMOS gate and the NMOS S/D contact area is larger than the PMOS contact hole S/D area, wherein the second desired stress is less compressive than the first desired stress.

15. A method of forming a device comprising:

providing a substrate prepared with first and second active regions, wherein the first active region comprises a first transistor and the second active region comprises a second transistor;

forming a stress layer having a first stress over the first and second active regions covering the first and second transistors;

forming a dielectric layer over the stress layer;

forming first and second contact openings in the first and second active regions in communication with diffusion regions of the first and second transistors, wherein

the first contact openings have a first contact layout design based on first stress considerations, the first contact layout design causes the stress layer with the first stress in the first active region to induce a first desired stress on a channel region of the first transistor based on the first stress considerations, the first contact openings of the first transistor comprise a first contact area, and

the second contact openings have a second contact layout design based on second stress considerations, the second contact layout design causes the stress layer with the first stress in the second active region to induce a second desired stress on a channel region of the second transistor based on the second stress considerations, the second contact openings of the second transistor comprise a second contact area, and

wherein the first contact area is smaller than the second contact area to reduce or minimize relaxing effects of the contact openings.

16. The method of claim 15 wherein:

the first stress comprises a tensile stress;

the first transistor comprises a n-type transistor;

the second transistor comprises a p-type transistor; and

the first desired stress is more tensile than the second desired stress.

17. The method of claim 15 wherein:

the first contact layout design comprises adapting size, shape, number or location or a combination thereof of the first contact openings; and

the second contact layout design comprises adapting size, shape, number or location or a combination thereof of the second contact openings.

18. The method of claim 17 wherein the first contact openings, on average, are located farther away from a gate of the first transistor between the diffusion regions to reduce or minimize relaxing effects of the contact openings.

19. The method of claim 15 wherein a ratio of the first contact opening area to the second contact opening area is about 1:18-1:2.

20. The method of claim 15 wherein the first contact openings, on average, are located farther away from a gate of the first transistor between the diffusion regions to reduce or minimize relaxing effects of the contact openings.

21. A device comprising:

a substrate having first and second active regions, wherein the first active region comprises a first transistor which is a n-type transistor and the second active region comprises a second transistor which is a p-type transistor;

a stress layer having a first stress over the first and second active regions covering the first and second transistors;

a dielectric layer disposed over the stress layer; and

first contact openings in the first active region in communication with diffusion regions of the first transistor and second contact openings in the second active region in communication with diffusion regions of the second transistor through the stress layer, wherein

the first contact openings have a first contact layout design based on first stress considerations, the first contact layout design causes the stress layer with the first stress in the first active region to induce a first desired stress on a channel region of the first transistor based on the first stress considerations, the first contact openings of the first transistor comprise a first contact area, and

the second contact openings have a second contact layout design based on second stress considerations, the second layout design causes the stress layer with the first stress in the second active region to induce a second desired stress on a channel region of the second transistor based on the second stress considerations, the second contact openings of the second transistor comprise a second contact area, and

wherein the first contact area is smaller than the second contact area or the first contact openings, on average, are located farther away from a gate of the first transistor or a combination thereof to reduce or minimize relaxing effects of the contact openings.

22. A method of forming a device comprising:

providing a substrate prepared with

a first active region with a first transistor which is a p-type transistor,

a second active region with a second transistor which is a n-type transistor,

a first stress layer on the active regions over the transistors, the stress layer having a first stress, and

a dielectric layer over the stress layer;

forming first contacts to first contact regions of the first transistor, wherein the first contacts comprise a first contact layout to cause a first desired stress on a first target region;

forming second contacts to second contact regions of the second transistor, wherein the second contacts comprise a second contact layout to cause a second desired stress on a second target region; and

wherein

the first contact layout has a larger area than the second contact layout,

the first contacts of the first contact layout are closer to the first transistor than the second contacts of the second contact layout to the second transistor, or

a combination thereof.

23. The method of claim 22 wherein

the first desired stress is different from the second desired stress.

24. The method of claim 22 wherein:

the first contact regions comprise first S/D regions of the first transistor;

the first target region comprises a first channel below a gate of the first transistor;

the second contact regions comprise second S/D regions of the second transistor; and

the second target region comprises a second channel below a gate of the second transistor.

25. The method of claim 22 wherein:

the first contact layout comprises adapting size, shape, number or location or a combination thereof of the first contact opening; and

the second contact layout comprises adapting size, shape, number or location or a combination thereof of the second contact opening.

26. The method of claim 25 wherein:

the first contact regions comprise first S/D regions of the first transistor; and

the first target region comprises a first channel below a gate of the first transistor;

the second contact regions comprise second S/D regions of the second transistor; and

the second target region comprises a second channel below a gate of the second transistor.

27. The method of claim 22 wherein:

the first stress comprises tensile stress;

the first desired stress is less tensile than the second desired stress.

28. The method of claim 23 wherein:

the first contact layout is selected to increase or maximize relaxing effects on the stress layer; and

the second contact layout is selected to reduce or minimize relaxing effects on the stress layer.

29. The method of claim 22 wherein the first contact layout is selected to increase or maximize relaxing effects on the stress layer.