Method for reforming color filter array of a CMOS image sensor

1 . A method for reforming a color filter array of a CMOS image sensor including a semiconductor substrate divided into a unit pixel array region and a pad region, a metal pad formed in the pad region of the semiconductor substrate, and a first cap oxide layer, a first color filter array, a first OCM pattern and a first micro-lens layer sequentially formed in the unit pixel array region, comprising:

exposing the first cap oxide layer by removing the first micro-lens, the first OCM pattern and the first color filter array;

removing the exposed first cap oxide layer;

forming a second cap oxide layer on an entire surface of the semiconductor substrate;

forming a second color filter array on the second cap oxide layer in correspondence with the unit pixel array region;

forming a second OCM pattern on the second color filter array;

exposing the metal pad by selectively etching the second cap oxide layer; and

forming a second micro-lens layer on the second OCM pattern.

2 . The method of claim 1 , wherein the second cap oxide layer is formed of a TEOS oxide layer.

3 . The method of claim 1 , wherein the second cap oxide layer is deposited by PECVD.

4 . The method of claim 1 , wherein the second cap oxide layer is formed at a thickness between about 400 Å and 1000 Å.

5 . The method of claim 1 , wherein the process of removing the exposed first cap oxide layer includes:

forming a mask layer on the metal pad; and

removing the exposed first cap oxide layer by using the mask layer as a mask.