Apparatus and method for removing photoresist in a semiconductor device
A photoresist in a semiconductor device with copper wiring is effectively removed at a low temperature of 25° C. using a photoresist removing apparatus that includes a vacuum chamber, a plasma generator located in the upper side of the chamber, and a wafer chuck that is insulated at all but a wafer-contacting surface, that is applied with an RF bias power, and that is located in the lower side of the chamber.
1 . An apparatus for removing a photoresist from a wafer, comprising:
a vacuum chamber;
a plasma generator in an upper side of the vacuum chamber; and
a wafer chuck at a lower side of the vacuum chamber and receiving an RF bias power, the wafer chuck being insulated on its entire surface excluding a surface in contact with the wafer.
2 . The apparatus of claim 1 , wherein the chamber is configured to have a temperature of 20-50° C. during removal of a photoresist from the wafer.
3 . The apparatus of claim 2 , wherein the temperature is about 25° C.
4 . The apparatus of claim 1 , wherein an upper surface of the wafer chuck is flat.
5 . The apparatus of claim 1 , wherein the wafer comprises a semiconductor device having copper wiring.
6 . A method for removing a photoresist from a wafer, comprising:
loading the wafer on the wafer chuck in a vacuum chamber;
stabilizing a process condition for at least one of gas flow, chamber pressure, and temperature to a predetermined setting point;
generating plasma at a temperature of 20-50° C. by supplying a source power; and
removing the photoresist.
7 . The method of claim 6 , wherein the process condition depends on whether the photoresist was used to etch or define a via hole, etch or define a trench, or fill a via hole as a sacrificial layer.
8 . The method of claim 6 , wherein the photoresist was used to etch or define a via hole, and removing the photoresist comprises flowing a gas comprising O 2 at 2000-3000 sccm and N 2 at 200-300 sccm, for a time of from 50 to 90 sec, at a chamber pressure of from 0.7 to 1.3 Torr, a chamber temperature of from 20 to 50° C., a source power of from 2000 to 3000 MW, and an RF bias power of from 100 to 200 W.
9 . The method of claim 8 , wherein, in removing the photoresist, the O 2 is flowed at a rate of about 2500 sccm and the N 2 at a rate of about 250 sccm, the time is about 70 sec, the chamber pressure is maintained at a level of about 1.0 Torr, the chamber temperature is maintained at about 25° C., the source power is about 2500 MW, and the RF bias power is about 150 W.
10 . The method of claim 6 , wherein the photoresist was used to etch or define a trench, and removing the photoresist comprises flowing a gas comprising O 2 at a rate of from 2000 to 3000 sccm and N 2 at a rate of from 200 to 300 sccm, for a time of from 90 to 150 sec, at a chamber pressure of from 1.3 to 1.9 Torr, a temperature of from 20 to 50° C., a source power of from 2000 to 3000 MW, and an RF bias power of from 150 to 250 W.
11 . The method of claim 9 , wherein, in removing the photoresist, the O 2 is flowed at a rate of about 2500 sccm and the N 2 is flowed at a rate of about 250 sccm, the process time is about 120 sec, the pressure of the chamber is maintained at a level of about 1.6 Torr, the temperature of the chamber is maintained at about 25° C., the source power is maintained at about 2500 MW, and the RF bias power is maintained at about 200 W.
12 . The method of claim 6 , wherein the photoresist was used for a sacrificial layer in a via hole, and removing the photoresist comprises flowing a gas comprising O 2 at a rate of from 300 to 1300 sccm and N 2 at a rate of from 30 to 130 sccm, for a time of from 3 to 10 sec, at a chamber pressure of from 0.2 to 0.8 Torr, a chamber temperature of from 20 to 50° C., a source power of about 0 W, and an RF bias power of from 60 to 160 W.
13 . The method of claim 12 , wherein removing the photoresist comprises recessing the photoresist in the via hole, the O 2 is flowed at a rate of about 800 sccm and the N 2 is flowed at a rate of about 80 sccm, the time is about 5 sec, the pressure of the process chamber is maintained at about 0.5 Torr, the temperature of the process chamber is maintained at about 25° C., and the RF bias power is about 110 W.
14 . A method of removing a photoresist, comprising:
supplying a source power to a photoresist removal apparatus comprising a chamber having a chamber temperature of 20-50° C. and at least one stable process condition selected from the group consisting of gas flow, chamber pressure, and temperature, sufficient to generate a plasma in the chamber; and
removing the photoresist from a wafer in the chamber.
15 . The method of claim 14 , wherein the process condition has a value depending on whether the photoresist defines a via hole, defines a trench, or fills a via hole.
16 . The method of claim 14 , wherein removing the photoresist comprises flowing a gas comprising O 2 at a rate of from 2000 to 3000 sccm and N 2 at a rate of from 200 to 300 sccm applying a source power of from 2000 to 3000 MW and an RF bias power of from 100 to 200 W.
17 . The method of claim 16 , wherein removing the photoresist is performed for a time of from 50 to 90 sec, at a chamber pressure of from 0.7 to 1.3 Torr.
18 . The method of claim 16 , wherein removing the photoresist is performed for a time of from 90 to 150 sec, at a chamber pressure of from 1.3 to 1.9 Torr.
19 . The method of claim 14 , wherein removing the photoresist comprises flowing a gas comprising O 2 and N 2 , at a chamber pressure of from 0.2 to 0.8 Torr, and an RF bias power of from 60 to 160 W.
20 . The method of claim 19 , wherein the O 2 flow rate is from 300 to 1300 sccm, the N 2 flow rate is from 30 to 130 sccm, and removing the photoresist is performed for a time of from 3 to 10 sec and a source power of about 0 W.