Method for controlling a vaporizer of ion implantation equipment during indium implantation process
View Patent ↗Disclosed is a method for controlling a vaporizer in ion implantation equipment during indium implantation process. The method comprises the steps of: (a) injecting a solid indium trichloride in a vaporizer; (b) raising a vaporizer temperature up to a first temperature at which water is able to be vaporized; (c) conditioning the vaporizer temperature in a temperature range between the first temperature and a second temperature at which the solid indium trichloride is able to be hydrolyzed, until water contained in the solid indium chloride can be removed; and (d) raising the vaporizer temperature up to a third temperature at which the indium trichloride is able to be vaporized.
1. A method for controlling a vaporizer in ion implantation equipment during an indium implantation process, comprising the steps of:
injecting solid indium trichloride into a vaporizer;
raising a vaporizer temperature to a first temperature at which water is able to be vaporized;
conditioning the vaporizer temperature in a temperature range between the first temperature and a second temperature at which water contained in the solid indium chloride is removed; and
raising the vaporizer temperature up to a third temperature at which the indium trichloride is able to be vaporized.
2. The method of claim 1 , wherein conditioning the vaporizer temperature comprises: raising the vaporizer temperature by a predetermined temperature interval from the first temperature to the second temperature; and maintaining the vaporizer temperature at the second temperature until both temperature and pressure of the vaporizer are stabilized.
3. The method of claim 1 , wherein the first temperature is about 100° C.
4. The method of claim 1 , wherein the second temperature is about 250° C.
5. The method of claim 2 , wherein the predetermined temperature interval is about 10° C.
6. The method of claim 1 , wherein conditioning the vaporizer temperature is performed under a pressure of 1E-15 Torr or less.
7. The method of claim 1 , wherein the third temperature is between 330° C. and 380° C.
8. The method of claim 1 , wherein the step of conditioning the vaporizer temperature is performed until water in the solid indium trichloride is substantially removed.
9. The method of claim 1 , wherein the step of conditioning the vaporizer temperature is performed under a pressure of 1 mTorr or less.
10. The method of claim 2 , wherein the step of conditioning the vaporizer temperature is performed under a pressure of 1 mTorr or less.
11. A method for removing water from a hydrated solid indium source material, comprising the steps of:
raising a temperature of a vaporizer in an ion implantation apparatus to a water vaporization temperature;
raising the vaporizer temperature to a water removal temperature at which water in the solid indium source material can be removed; and
raising the vaporizer temperature up to an indium source material vaporization temperature.
12. The method of claim 11 , further comprising injecting the solid indium source material into a vaporizer.
13. The method of claim 11 , wherein the solid indium source material comprises indium trichloride.
14. An apparatus for implanting indium ions, comprising:
a vaporizer adapted to heat a hydrated solid indium source material; and
a temperature controller adapted to raise the vaporizer temperature to a water vaporization temperature, a water removal temperature at which water in the solid indium source material can be removed, and an indium source material vaporization temperature at which the indium source material can be vaporized.
15. The apparatus of claim 14 , further comprising an injecting tube configured to introduce the indium source material into the vaporizer.