Structure and method for making high density mosfet circuits with different height contact lines
View Patent ↗Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits include a contact line, a first gate layer situated proximate the contact line, and at least one subsequent gate layer situated over the first gate layer. The contact line includes a height that is less than a combined height of the first gate layer and the subsequent gate layer(s). The MOSFET circuits further include gate spacers situated proximate the gate layers and a single contact line spacer situated proximate the contact line. The gate spacers are taller and thicker than the contact line spacer.
1. A MOSFET circuit, comprising:
a contact line;
a first gate layer situated proximate said contact line, wherein said contact line comprises a height that is less than a height of said first gate layer, and
a polysilicon germanium gate layer situated above said first gate layer and below at least one subsequent gate layer.
2. The MOSFET circuit according to claim 1 , all the limitations of which are incorporated herein by reference, further comprising:
gate spacers situated proximate said first gate layer; and
a single contact line spacer situated proximate said contact line,
wherein said contact line spacer comprises a height that is less than a height of said gate spacers.
3. The MOSFET circuit according to claim 1 , all the limitations of which are incorporated herein by reference, further comprising:
gate spacers situated proximate said first gate layer; and
a single contact line spacer situated proximate said contact line,
wherein said contact line spacer comprises a thickness that is less than a thickness of said gate spacers.
4. A MOSFET circuit, comprising:
a contact line;
a first gate layer situated proximate said contact line;
at least one second gate layer situated over said first gate layer;
gate spacers situated proximate said first gate layer and said second gate layer;
less than two contact line spacers situated proximate said contact line; and
a polysilicon germanium gate layer situated above said first gate layer and below at least one subsequent gate layer.
5. The MOSFET circuit according to claim 4 , all the limitations of which are incorporated herein by reference, wherein said contact line comprises a height that is less than a combined height of said first gate layer and said second gate layer.
6. The MOSFET circuit according to claim 4 , all the limitations of which are incorporated herein by reference, wherein said less than two contact line spacers comprises a height that is less than a height of said gate spacers.
7. The MOSFET circuit according to claim 4 , all the limitations of which are incorporated herein by reference, wherein said less than two contact line spacers comprises a thickness that is less than a thickness of said gate spacers.