Semiconductor device structure having enhanced performance FET device
View Patent ↗A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate: a first layer below and second layers on a gate with spacers, source and drain regions adjacent to the gate, silicides on the gate and source and drain regions; disposing a stress layer over the structure resulting from the forming step; disposing an insulating layer over the stress layer; removing portions of the insulating layer to expose a top surface of the stress layer; removing the top surface and other portions of the stress layer and portions of the spacers to form a trench, and then disposing a suitable stress material into the trench.
1. A method for making a semiconductor device structure, comprising:
forming on a substrate: a first layer below and second layers on a gate with spacers, source and drain regions adjacent to the gate, silicides on the gate and source and drain regions, and a sidewall oxide layer between the spacers and the gate;
disposing a stress layer over the structure resulting from said forming step;
disposing an insulating layer over the stress layer;
removing portions of the insulating layer to expose a top surface of the stress layer;
removing the top surface and other portions of the stress layer and portions of the spacers, and not said sidewall oxide layer to form a trench, the trench extending along a height of the silicide on the gate and partly along a height of the gate; and then
disposing a stress material into the trench.
2. The method as claimed in claim 1 , said step of removing the top surface comprising forming the trench at locations above the silicide on the gate and above and around portions of the second layers.
3. The method as claimed in claim 1 , further comprising removing the stress material such that the stress material remains only in the trench.
4. The method as claimed in claim 1 , wherein the stress layer is a layer selected from the group consisting essentially of silicon nitride, silicon oxide and silicide layers.
5. The method as claimed in claim 1 , wherein the insulating layer is an oxide layer.
6. The method as claimed in claim 1 , wherein said step of removing portions of the insulating layer comprises chemically mechanically polishing the insulating layer.
7. The method as claimed in claim 1 , wherein said step of removing portions of the insulating layer comprises reactive ion etching the insulating layer.
8. The method as claimed in claim 1 , wherein said step of removing the top surface comprises etching the top surface selectively to the second layers.
9. The method as claimed in claim 1 , wherein the first layer and the second layers are oxides.
10. The method as claimed in claim 1 , said step of disposing a stress material into the trench comprising disposing a compressive stress material into the trench.
11. The method as claimed in claim 1 , said step of disposing a stress material into the trench comprising disposing a tensile stress material into the trench.
12. The method as claimed in claim 1 , said step of removing the top surface comprising removing the top surface and other portions of the stress layer and portions of the spacers to form a trench which surrounds portions of the second layers and portions of the silicide on the gate.
13. The method as claimed in claim 1 , wherein the stress layer has a thickness of about 20 nanometers to about 80 nanometers.
14. A method for making a semiconductor device structure, comprising:
forming on a substrate: a first layer below and second layers on a gate with spacers, source and drain regions adjacent to the gate, silicides on the gate and source and drain regions;
disposing a stress layer over the structure resulting from said forming step;
disposing an insulating layer over the stress layer;
removing portions of the insulating layer to expose a top surface of the stress layer;
removing the top surface and other portions of the stress layer and portions of the spacers to form a trench, the trench extending along a height of the silicide on the gate and partly along a height of the gate; and then
disposing a stress material into the trench, wherein said stress layer has one of a tensile stress or a compressive stress, and said stress material has the other of said tensile stress or compressive stress not present in the stress layer.