IP Library Granted Patent US 7,423,862
Granted Patent B2
US 7,423,862 · App. 11/311,376 · Granted Sep 9, 2008

Solid electrolytic capacitor element, solid electrolytic capacitor and production method thereof

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Quick Facts
Patent No.
US 7,423,862
App. No.
11/311,376
Granted
Sep 9, 2008
Kind
B2
Abstract

The invention relates to a process for producing a solid electrolytic capacitor element, comprising forming a semiconductor layer containing a conductive polymer on a conductor having a dielectric layer on its surface. By using the solid electrolytic capacitor element of the invention prepared by forming a semiconductor layer on the conductor having a dielectric layer on its surface by an electrification method after the conductor is impregnated with a dopant, a solid electrolytic capacitor having a favorable ESR value can be fabricated.

Claims (15)

1. A process for producing a solid electrolytic capacitor element, comprising forming a semiconductor layer containing a conductive polymer on a conductor having a dielectric layer on its surface, next impregnating the conductor with a dopant and, after the conductor is impregnated with the dopant, forming a semiconductor layer on the doped conductor having a dielectric layer on its surface by an electrification method.

2. The process for producing a solid electrolytic capacitor element as claimed in claim 1 , wherein the dopant is an electron donating compound providing, upon doping through electrolytic polymerization, a conductive polymer having a conductivity of from 10 −1 to 10 3 S·cm −1 .

3. The process for producing a solid electrolytic capacitor element as claimed in claim 1 , wherein the dopant is at least one selected from a compound having a sulfuric acid group and a boron compound having a carboxylic acid coordinated to a boron atom.

4. The process for producing a solid electrolytic capacitor element as claimed in claim 1 , wherein the conductor is a metal containing as a major component at least one selected from tantalum, niobium, titanium and aluminum, niobium oxide, or a mixture of two or more thereof.

5. The process for producing a solid electrolytic capacitor element as claimed in claim 1 , wherein the semiconductor layer is a layer comprising at least one selected from a semiconductor containing as a major component a conductive polymer obtained by doping a polymer containing a repeating unit represented by formula (1) or (2) with a dopant:

wherein R 1 to R 4 each independently represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms or an alkoxy group having from 1 to 6 carbon atoms; X represents an oxygen atom, a sulfur atom or a nitrogen atom; and R 5 , which exists only when X is a nitrogen atom, represents a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, provided that R 1 and R 2 , and R 3 and R 4 each may be bonded to form a ring.

6. The process for producing a solid electrolytic capacitor element as claimed in claim 5 , wherein the polymer containing a repeating unit represented by formula (1) is a polymer containing a structural unit represented by formula (3) as a repeating unit:

wherein R 6 and R 7 each independently represent a hydrogen atom, a linear or branched and saturated or unsaturated alkyl group having from 1 to 6 carbon atoms, or a substituent having at least one 5- to 7-membered saturated hydrocarbon ring structure containing two oxygen atoms formed by bonding the alkyl groups at an arbitrary position, provided that the ring structure encompasses a structure having a vinylene bond, which may be substituted, and a phenylene structure, which may be substituted.

7. The process for producing a solid electrolytic capacitor element as claimed in claim 5 , wherein the conductive polymer is selected from polyaniline, polyoxyphenylene, polyphenylene sulfide, polythiophene, polyfuran, polypyrrole, polymethylpyrrole and substituted derivatives and copolymers thereof.

8. The process for producing a solid electrolytic capacitor element as claimed in claim 7 , wherein the conductive polymer is poly(3,4-ethylenedioxythiophene).

9. The process for producing a solid electrolytic capacitor element as claimed in claim 5 , wherein the semiconductor has a conductivity in a range of from 10 −2 to 10 3 S·cm −1 .

10. A solid electrolytic capacitor element produced by the production process described in claim 1 .

11. A solid electrolytic capacitor obtained by sealing the solid electrolytic capacitor element described in claim 10 .

12. An electronic circuit comprising the solid electrolytic capacitor described in claim 11 used therein.

13. An electronic equipment comprising the solid electrolytic capacitor described in claim 11 mounted therein.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2005
From: NAITO, KAZUMI; TAMURA, KATUTOSHI
To: SHOWA DENKO K.K.
Reel/Frame 017402/0596 →