Crystalline composition, device, and associated method
View Patent ↗A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride.
1. A composition, comprising:
a polycrystalline group III metal nitride having a plurality of grains, and the grains having a columnar structure, wherein an average grain diameter is larger than about 10 micrometers; and, one or more of
the metal nitride having an impurity content of less than about 200 parts per million;
the metal nitride having a porosity in volume fraction in a range of from about 0.1 percent to about 30 percent; or
the metal nitride having an apparent density in a range of from about 70 percent to about 99.8 percent of the theoretical density value corresponding to the metal nitride.
2. The composition as defined in claim 1 , wherein the metal comprises one or more of aluminum, indium, or gallium.
3. The composition as defined in claim 1 , wherein the average number of grains in the plurality is in a range of from about 100 per cubic centimeter to about 10,0000 per cubic centimeter.
4. The composition as defined in claim 1 , wherein the porosity of the metal nitride in volume fraction is in a range of from about 0.1 percent to about 10 percent.
5. The composition as defined in claim 1 , wherein the porosity of the metal nitride in volume fraction is in a range of from about 10 percent to about 30 percent.
6. The composition as defined in claim 1 , wherein an average grain diameter is greater than about 1 millimeter.
7. The composition as defined in claim 1 , wherein an atomic fraction of the metal in the metal nitride is in a range of from about 0.49 to about 0.55.
8. The composition as defined in claim 1 , wherein the impurity content of the metal nitride is in a range of from about 100 parts per million to about 5 parts per million.
9. The composition as defined in claim 1 , wherein the impurity consists essentially of oxygen.
10. The composition as defined in claim 9 , wherein the oxygen content of the metal nitride is less than about 100 parts per million.
11. The composition as defined in claim 9 , wherein the oxygen content of the metal nitride is in a range of from about 100 parts per million to about 20 parts per million.
12. The composition as defined in claim 9 , wherein the oxygen content of the metal nitride is less than about 20 parts per million.
13. The composition as defined in claim 1 , wherein the apparent density of the polycrystalline metal nitride is in a range of from about 85 percent to about 95 percent of the theoretical value.
14. The composition as defined in claim 1 , wherein the atomic fraction of the metal in the metal nitride is in a range of from about 0.50 to about 0.51.
15. The composition as defined in claim 1 , further comprising one or more dopants.
16. The composition as defined in claim 15 , wherein the dopants are capable of producing one or more of n-type material, p-type material, or semi-conducting material.
17. The composition as defined in claim 15 , wherein the dopants are capable of producing one or more of a semi-insulating material, a magnetic material, or a luminescent material.
18. The composition as defined in claim 15 , wherein the dopant concentration is greater than about 10 21 atoms per cubic centimeters.
19. The composition as defined in claim 15 , wherein the dopant concentration is in a range of from about 10 21 atoms per cubic centimeters to about 10 16 atoms per cubic centimeters.
20. The composition as defined in claim 1 , wherein the polycrystalline metal nitride has an inter-grain bend strength greater than about 20 MegaPascal.
21. The composition as defined in claim 1 , wherein the polycrystalline metal nitride has an inter-grain bend strength that is in a range of from about 20 MegaPascal to about 90 MegaPascal.
22. The composition as defined in claim 1 , wherein the polycrystalline metal nitride has an inter-grain bend strength greater than about 90 MegaPascal.
23. A composition, comprising:
a polycrystalline group III metal nitride having a plurality of grains, and the grains having a columnar structure;
the grains having an average grain diameter larger than about 10 micrometers; and
wherein the polycrystalline metal nitride has an inter-grain bend strength greater than about 20 MegaPascal.
24. The composition as defined in claim 23 , the metal nitride having a halide content in an amount of less than about 2.4 parts per million.
25. The composition as defined in claim 24 , wherein the halide comprises chlorine.
26. A composition, comprising:
a polycrystalline group III metal nitride having a plurality of grains, the grains having an average grain diameter larger than about 10 micrometers, and the grains having a columnar structure wherein a ratio of an average grain size to an average grain diameter is in a range of greater than about 2.
27. The composition as defined in claim 26 , wherein the metal nitride comprises gallium nitride.
28. The composition as defined in claim 26 , wherein the metal nitride comprises aluminum nitride.