Semiconductor device and fabricating method thereof
A semiconductor device and fabricating method thereof can prevent an electrical characteristic degradation of the semiconductor device when a boarderless type contact is formed. The device may include a transistor on a semiconductor substrate, an oxynitride layer on the semiconductor sustrate,an insulating interlayer on the oxynitride layer, a metal line on the insulating interlayer, contact perforating the insulating interlayer and the oxynitride layer to electrically connect the metal line to the transistor.
1 . A semiconductor device comprising:
a transistor on a semiconductor substrate;
an oxynitride layer on the semiconductor substrate including the transistor;
an insulating interlayer on the oxynitride layer;
a metal line on the insulating interlayer; and
a contact perforating the insulating interlayer and the oxynitride layer to electrically connect the metal line to the transistor.
2 . The semiconductor device of claim 1 , wherein the oxynitride layer has an oxygen content greater than a nitrogen content.
3 . The semiconductor device of claim 1 , wherein the insulating interlayer comprises a material selected from the group consisting of oxide, BPSG (borophospho silicate glass) and PSG (phospho silicate glass).
4 . The semiconductor device of claim 1 , wherein a surface of the insulating interlayer is planarized by CMP (chemical mechanical polishing).
5 . The semiconductor device of claim 4 , further comprising a buffer layer on the planarized surface of the insulating interlayer to compensate for scratches caused by the CMP.
6 . A method of fabricating a semiconductor device, comprising the steps of:
forming a transistor on a semiconductor substrate;
forming an oxynitride layer on the semiconductor substrate including the transistor;
forming at least one insulating interlayer on the oxynitride layer;
forming a contact hole by selectively etching the at least one insulating interlayer and the oxynitride layer until a prescribed portion of the transistor is exposed; and
forming a contact by filling the contact hole with a conductive substance.
7 . The method of claim 6 , wherein the oxynitride layer has an oxygen content greater than a nitrogen content.
8 . The method of claim 6 , wherein forming an oxynitride layer is performed by PECVD (plasma enhanced chemical vapor deposition).
9 . The method of claim 8 , wherein the PECVD is performed at approximately 300 to 400° C.
10 . The method of claim 8 , wherein the PECVD is performed at 350° C.
11 . The method of claim 6 , wherein the insulating interlayer comprises a material selected from the group consisting of oxide, BPSG (borophospho silicate glass) and PSG (phospho silicate glass).
12 . The method of claim 6 , further comprising the step of planarizing the at least one insulating interlayer by chemical mechanical polishing.
13 . The method of claim 12 , further comprising the step of forming a buffer layer on the planarized insulating interlayer.