IP Library Granted Patent US 7,566,853
Granted Patent B2
US 7,566,853 · App. 11/317,207 · Granted Jul 28, 2009

Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture

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Quick Facts
Patent No.
US 7,566,853
App. No.
11/317,207
Granted
Jul 28, 2009
Kind
B2
Abstract

Image sensors are provided having a plurality of photodetectors in a detector layer Optionally, an optically transparent substrate is provided for a rear-illuminated sensor architecture. The photodetectors may be arranged in three or more arrays. Typically, each array is contiguous and is associated with light of a different color and/or wavelength. In addition, the arrays may be coplanar, or, in the alternative, located at increasing distances from a light-receiving surface in an at least partially nonoverlapping manner. Also provided are image sensor packages.

Claims (55)

1. An image sensor, comprising:

an optically transparent substrate having a light-receiving surface and an opposing surface;

photodetectors located at sites of first, second, and third arrays in a detector layer in contact with the opposing surface;

the first m by n array including a plurality of contiguous photodetectors;

the second p by q array including a plurality of contiguous photodetectors;

the third r by s array including a plurality of contiguous photodetectors;

wherein m, n, p, q, r and s denote the quantity of rows and columns, respectively, each of m, n, p, q, r and s being greater than or equal to 2; and

one or more color filters positioned in a manner effective to allow for selective transmission of light of red, green, and blue wavelengths through the substrate to first, second, and third arrays, respectively.

2. The sensor of claim 1 , wherein the substrate comprises an oxide material.

3. The sensor of claim 2 , wherein the oxide material is selected from the group consisting of silicon oxides and aluminum oxides.

4. The sensor of claim 3 , wherein the oxide material is a crystalline silicon oxide.

5. The sensor of claim 1 , wherein the detector layer comprises a semiconductor material.

6. The sensor of claim 5 , wherein the semiconductor material comprises Si.

7. The sensor of claim 1 , wherein the photodetectors are arranged in contiguous first, second, and third arrays within the detector layer.

8. The sensor of claim 7 , wherein the arrays are substantially coplanar relative to each other.

9. The sensor of claim 7 , wherein the arrays are arranged in a triangle pattern.

10. The sensor of claim 1 , wherein the photodetectors are located at sites of first, second, third, and fourth arrays in the detector layer.

11. The sensor of claim 10 , wherein the arrays are arranged in a quadrilateral pattern.

12. The sensor of claim 1 , wherein the photodetectors are located at sites of first, second, third, fourth, and fifth arrays in the detector layer.

13. The sensor of claim 12 , wherein the arrays are arranged in a cross pattern.

14. The sensor of claim 1 , wherein the arrays arranged in a linear pattern.

15. The sensor of claim 1 , further comprising a fourth array of photodetectors, wherein the one or more color filters is positioned to allow for selective transmission of light of red, green, blue, and fourth wavelengths through the substrate to first, second, third, and fourth arrays, respectively.

16. The sensor of claim 15 , wherein the fourth wavelength corresponds to white.

17. The sensor of claim 15 , wherein the fourth wavelength is substantially equal to either the first, second, or the third wavelength.

18. The sensor of claim 17 , wherein the fourth wavelength corresponds to green.

19. The sensor of claim 1 , in the absence of any microlens.

20. A image sensor package, comprising:

an optically transparent substrate having a light-receiving surface;

a plurality of electrical contacts;

a detector layer interposed between the electrical contact and the substrate;

photodetectors located at sites of first, second, and third arrays in the detector layer;

the first m by n array including a plurality of contiguous photodetectors;

the second p by q array including a plurality of contiguous photodetectors;

the third r by s array including a plurality of contiguous photodetectors;

wherein m, n, p, q, r and s denote the quantity of rows and columns, respectively, each of in, n, p, q, r and s being greater than or equal to 2;

one or more color filters positioned in a manner effective to allow for selective transmission of light of red, green, and blue wavelengths through the substrate to first, second, and third arrays, respectively; and

wherein the electrical contacts are in electrical communication with the photodetectors, and movable relative to the photodetectors.

21. An image sensor, comprising:

substantially coplanar first, second, and third contiguous arrays of photodetectors located in a detector layer;

the first m by n array including a plurality of contiguous photodetectors;

the second p by q array including a plurality of contiguous photodetectors;

the third r by s array including a plurality of contiguous photodetectors;

wherein m, n, p, q, r and s denote the quantity of rows and columns, respectively, each of m, n, p. q, r and s being greater than or equal to 2; and

first, second, and third lenses positioned in a manner effective to direct transmission of light to the first, second, and third arrays of photodetectors, respectively.

22. An image sensor, comprising:

a detector layer having a light-receiving surface;

first, second, and third contiguous arrays of photodetectors located in the detector layer at increasing distances from the light-receiving surface;

the first in by n array including a plurality of contiguous photodetectors;

the second p by q array including a plurality of contiguous photodetectors;

the third r by s array including a plurality of contiguous photodetectors;

wherein m, n, p, q, r and s denote the quantity of rows and columns, respectively, each of m, n, p, q, r and s being greater than or equal to 2; and

wherein at least a portion of each array does not overlap another.

23. The image sensor of claim 22 , wherein no portion of each array overlaps another.

24. The image sensor of claim 23 , wherein each contiguous array is placed in a manner effective to detect light of a different wavelength.

25. The image sensor of claim 22 , wherein no pixel overlaps another.

Assignments (6)
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 073657/0979 →
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 073658/0661 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2006
From: TUCKERMAN, DAVID B.; HONER, KENNETH ALLEN; MCWILLIAMS, BRUCE M.; COLELLA, NICHOLAS J.; GOUDGE, CHARLES LIAM
To: TESSERA, INC.
Reel/Frame 017920/0581 →