IP Library Patent Application 11317703
Patent Application
App. No. 11/317,703

Shield unit for TiN sputtering apparatus, method of coating the same, and sputtering method

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Quick Facts
Patent No.
US None
App. No.
11/317,703
Abstract

The present invention relates to a shield unit for a titanium nitride (TiN) sputtering apparatus that can reduce or prevent generation of unwanted particles. An exemplary shield unit for the sputtering apparatus according to an embodiment of the present invention includes an upper shield having a titanium (Ti) coating on an upper portion thereof and (optionally) an aluminum (Al) coating on a lower portion thereof, and a lower shield having a titanium (Ti) on at least part of a sidewall thereof and (optionally) an aluminum (Al) on a bottom surface thereof.

Claims (25)

1 . A shield unit for protecting an interior part of a chamber in a sputtering apparatus, the shield unit comprising:

an upper shield having a titanium (Ti) coating on an upper portion thereof; and

a lower shield having a titanium (Ti) coating on at least part of a sidewall thereof.

2 . The shield unit of claim 1 , wherein an average roughness of the titanium coatings is about 400±40 μm/inch.

3 . The shield unit of claim 1 , wherein the upper shield further includes an aluminum (Al) coating on a lower portion thereof.

4 . The shield unit of claim 1 , wherein the lower shield further includes an aluminum (Al) coating on a bottom portion thereof.

5 . The shield unit of claim 3 , wherein an average roughness of the aluminum coating is about 500±50 μm/inch.

6 . The shield unit of claim 4 , wherein an average roughness of the aluminum coating is about 500±50 μm/inch.

7 . An apparatus adapted to sputter titanium nitride, comprising a sputtering chamber and the shield unit of claim 1 therein.

8 . A method of coating a shield unit for a sputtering apparatus, the shield unit comprising an upper shield and a lower shield, the method comprising:

coating an upper portion of the upper shield with titanium; and

coating at least part of an interior sidewall of the lower shield with titanium.

9 . The method of claim 8 , wherein the titanium coatings have an average roughness of about 400±40 μm/inch.

10 . The method of claim 8 , further comprising coating a lower portion of the upper shield with aluminum (Al).

11 . The method of claim 8 , further comprising coating a bottom portion of the lower shield with aluminum (Al).

12 . The method of claim 10 , wherein the aluminum coating has an average roughness of about 500±50 μm/inch.

13 . The method of claim 11 , wherein the aluminum coating has an average roughness of about 500±50 μm/inch.

14 . A method for sputtering titanium nitride, comprising:

placing a substrate in a sputtering apparatus having a shield unit therein, the shield unit comprising an upper shield and a lower shield, the upper shield having a titanium coating on an upper portion thereof, and the lower shield having a titanium coating on at least part of an interior sidewall thereof; and

depositing the titanium nitride on the substrate in the sputtering apparatus.

15 . The method of claim 14 , wherein a barrier layer for a metal line on the substrate comprises at least part of the titanium nitride.

16 . The sputtering method of claim 14 , wherein an average roughness of a surface having the titanium coating thereon is about 400±40 μm/inch.

17 . The method of claim 14 , wherein the upper shield further includes an aluminum (Al) coating on a lower portion thereof, and the lower shield further includes an aluminum (Al) coating on a bottom portion thereof.

18 . The method of claim 17 , wherein an average roughness of a surface having the aluminum coating thereon is about 500±50 μm/inch.

19 . The method of claim 14 , further comprising forming the metal line on at least part of the titanium nitride.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 017749 FRAME 0335. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNOR SHOULD BE "DONGBUANAM SEMICONDUCTOR INC.". Recorded Jun 21, 2006
From: DONGBUANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 017821/0670 →
CHANGE OF NAME Recorded Jun 8, 2006
From: DONGANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 017749/0335 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2005
From: AHN, KYO-JUN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 017542/0161 →