Photosensitive resin composition, thin film panel made with photosensitive composition, and method for manufacturing thin film panel
View Patent ↗A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure a first silicone compound having the structure a second silicone compound having the structure The resin composition may be used in display panels.
1. A photosensitive resin composition comprising:
an alkali-soluble resin;
a quinone diazide;
a solvent; and
a surfactant that includes:
an organic fluorine compound of structure
where R f is a chained or branched perfluoroalkylene group including about 5–10 carbon atoms and Z is a hydrogen or a fluorine;
a first silicone compound of structure
where R is a chained or branched alkylene group including about 2–5 carbon atoms and each of x and y is an integer of about 1–20; and
a second silicone compound of structure
where R′ is an alkyl group including about 1–20 carbon atoms or a chained or branched carbonyl alkyl group including about 2–21 carbon atoms and each of v and w is an integer of about 1–20, and each of m and l is an integer of about 1–9 wherein (m+l) lies between 2 and 10.
2. The composition of claim 1 , wherein the weight percentage of the alkali-soluble resin in a total solid content of the composition ranges from about 50 to about 98 wt. %, the weight percentage of the quinone diazide in the total solid content of the composition ranges from about 1.7 to about 50 wt. %, and the weight percentage of the surfactant in the total solid content of the composition ranges from about 3×10 −4 to 0.3 wt. %.
3. The composition of claim 1 , wherein the organic fluorine compound is at least one selected from 3-perfluorohexyl-1,2-epoxypropane, 3-perfluorooctyl-1,2-epoxypropane, and 3-perfluorodecyl-1,2-epoxypropane.
4. The composition of claim 1 , wherein the weight percentage of the organic fluorine compound in the surfactant is from about 10 to about 50 wt. %, the weight percentage of the first silicone compound in the surfactant is from about 10 to about 50 wt. %, the weight percentage of the second silicone compound in the surfactant is from about 10 to about 50 wt. %.
5. The composition of claim 1 , wherein the weight percentage of each of the organic fluorine compound and the first and the second silicone compounds in the composition ranges from about 1×10 −4 to about 0.1 wt. %.
6. The composition of claim 1 , wherein the first silicone compound comprises a reaction product of methyl hydro bis(trimethyl siloxy)silane and polyalkylene glycol monoallyl ether.
7. The composition of claim 1 , wherein the second silicone compound comprises a reaction product of trimethylsilyl terminated-(dimethylsiloxane-methylhydrosiloxane) copolymer and carboxylic acid ester of polyalkylene glycol allyl alkyl ether or polyalkylene glycol allyl ether.
8. The composition of claim 1 , further comprising at least one of a cationic polymerization initiator, a phenolic compound, a cross-linking agent, a polymerizable monomer, and a silane coupling agent.
9. A thin film panel comprising:
a substrate;
a thin film pattern formed on the substrate; and
an insulating layer formed on the thin film pattern and made from a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a solvent, and a surfactant that comprises:
an organic fluorine compound of structure
where R f is a chained or branched perfluoroalkylene group including about 5–10 carbon atoms and Z is a hydrogen or a fluorine;
a first silicone compound of structure
where R is a chained or branched alkylene group including about 2–5 carbon atoms and each of x and y is an integer of about 1–20; and
a second silicone compound of structure
where R′ is an alkyl group including about 1–20 carbon atoms or a chained or branched carbonyl alkyl group including about 2–21 carbon atoms and each of v and w is an integer of about 1–20, and each of m and l is an integer of about 1–9 wherein (m+l) lies between 2 and 10.
10. The thin film panel of claim 9 , wherein the thin film pattern comprises:
a gate line;
a semiconductor layer formed on the gate line; and
a data line and a drain electrode formed on the semiconductor layer.
11. The thin film panel of claim 10 , further comprising a pixel electrode formed on the insulating layer and connected to the drain electrode.
12. The thin film panel of claim 10 , further comprising a color filter disposed under the insulating layer.
13. A method of manufacturing a thin film panel, the method comprising:
forming a thin film pattern on a substrate;
coating a photosensitive resin composition including an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent;
performing a light exposure on the photosensitive resin composition through a photomask; and
developing the photosensitive resin composition to obtain a thin film pattern, wherein the surfactant comprises:
an organic fluorine compound of structure
where R f is a chained or branched perfluoroalkylene group including about 5–10 carbon atoms and Z is a hydrogen or a fluorine;
a first silicone compound of structure
where R is a chained or branched alkylene group including about 2–5 carbon atoms and each of x and y is an integer of about 1–20; and
a second silicone compound of structure
where R′ is an alkyl group including about 1–20 carbon atoms or a chained or branched carbonyl alkyl group including about 2–21 carbon atoms and each of v and w is an integer of about 1–20, and each of m and l is an integer of about 1–9 wherein (m+l) lies between 2 and 10.
14. The method of claim 13 , wherein the coating of the photosensitive resin composition uses a slit type nozzle.
15. The method of claim 13 , wherein the photosensitive resin composition has a thickness from about 1.0 to about 8.0 microns.
16. The method of claim 13 , further comprising:
removing the solvent from the photosensitive resin composition before the light exposure.
17. The method of claim 13 , further comprising:
exposing the thin film pattern to light after the development; and
baking the thin film pattern after the exposure.
18. The method of claim 13 , further comprising:
baking the thin film pattern after the development.
19. The method of claim 13 , wherein the formation of the thin film pattern comprises:
forming a gate line on the substrate;
depositing a gate insulating layer and a semiconductor layer in sequence;
etching the semiconductor layer; and
forming a data lines and a drain electrode on the semiconductor layer.
20. The method of claim 19 , further comprising:
forming a pixel electrode on the photosensitive resin composition,
wherein the photosensitive resin composition has a contact hole exposing the drain electrode and the pixel electrode is connected to the drain electrode.