Metal oxide semiconductor field effect transistor
View Patent ↗A metal oxide semiconductor field effect transistor (MOSFET) is disclosed. The MOSFET includes a semiconductor substrate, a germanium layer formed by implanting germanium (Ge) ions into the semiconductor substrate, an epitaxial layer doped with high concentration impurities over the germanium layer, a gate structure on the epitaxial layer, and source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate. The germanium layer supplies carriers into the epitaxial layer so that short channel effects are reduced.
1. A metal oxide semiconductor field effect transistor (MOSFET), comprising:
a semiconductor substrate;
a germanium layer formed by implanting germanium (Ge) ions into the semiconductor substrate;
an epitaxial layer doped with a high concentration of impurities over the germanium layer;
a gate structure on the epitaxial layer;
source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate; and
a selective epitaxial layer on the source/drain regions, wherein the selective epitaxial layer is formed on the same horizontal plane with the gate structure.
2. The MOSFET according to claim 1 , wherein the selective epitaxial layer has a thickness of about 300±100 Å.
3. The MOSFET according to claim 1 , further comprising gate spacers on sidewalls of the gate structure.
4. The MOSFET according to claim 1 , wherein the germanium layer supplies carriers into the epitaxial layer.
5. The MOSFET according to claim 1 , wherein a ratio of a thickness of the epitaxial layer to a thickness of the germanium layer is in a range of 1:2 to 1:4.
6. The MOSFET according to claim 1 , wherein a ratio of a total thickness of the epitaxial layer and the germanium layer to a critical dimension of the MOSFET is in a range of 1:3 to 1:4.
7. The MOSFET according to claim 1 , wherein a critical dimension of the MOSFET is equal to or greater than a horizontal length of the epitaxial layer between the source/drain regions, and is equal to or less than a horizontal length of the germanium layer between the source/drain regions.
8. A metal oxide semiconductor field effect transistor (MOSFET), comprising:
an epitaxial layer doped with high concentration impurity ions as a channel in a semiconductor substrate;
a germanium layer in the semiconductor substrate and under the epitaxial layer for supplying carriers into the epitaxial layer;
a gate structure on the epitaxial layer;
source/drain regions with lightly doped drain (LDD) regions, the source/drain regions being spaced apart from each other by the epitaxial layer and the germanium layer; and
a selective epitaxial layer on a surface of the source/drain regions at both sides of the gate structure, wherein the selective epitaxial layer is formed on the same horizontal plane with the gate structure.
9. The MOSFET according to claim 8 , further comprising gate spacers on sidewalls of the gate structure.
10. The MOSFET according to claim 8 , wherein a ratio of a thickness of the epitaxial layer to a thickness of the germanium layer is in a range of 1:2 to 1:4.
11. The MOSFET according to claim 8 , wherein a ratio of a total thickness of the epitaxial layer and the germanium layer to a critical dimension of the MOSFET is in a range of 1:3 to 1:4.
12. The MOSFET according to claim 8 , wherein a critical dimension of the MOSFET is equal to or greater than a horizontal length of the epitaxial layer between the source/drain regions, and is equal to or less than a horizontal length of the germanium layer between the source/drain regions.