Method of manufacturing semiconductor device suitable for forming wiring using damascene method
View Patent ↗A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. Then a first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. Then conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. Then the semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members.
1. A semiconductor device manufacture method comprising steps of:
(a1) forming a concave portion in an interlayer insulating film formed over a semiconductor substrate;
(a2) forming a first film of Mn by CVD, the first film covering an inner surface of the concave portion and an upper surface of the insulating film;
(a3) depositing conductive material essentially consisting of Cu on the first film to embed the conductive material in the concave portion; and
(a4) annealing the semiconductor substrate.
2. The semiconductor device manufacture method according to claim 1 , wherein the step (a3) comprises steps of:
forming a second film of Cu by CVD or sputtering, the second film covering a surface of the first film; and
electroplating conductive material essentially consisting of Cu, by using the second film as an electrode.
3. The semiconductor device manufacture method according to claim 1 , wherein in the step (a3), the conductive material is embedded in the concave portion by depositing the conductive material essentially consisting of Cu using CVD.
4. The semiconductor device manufacture method according to claim 1 , wherein in the step (a2), bismethylcyclopentadienyl manganese or bisisopropylcyclopentadienyl manganese is used as Mn source.